TC518129AFWI-10 Datasheet PDF - Toshiba

www.Datasheet-PDF.com

TC518129AFWI-10
Toshiba

Part Number TC518129AFWI-10
Description SILICON GATE CMOS PSEUDO STATIC RAM
Page 9 Pages


TC518129AFWI-10 datasheet pdf
Download PDF
TC518129AFWI-10 pdf
View PDF for Mobile


No Preview Available !

TOSHIBA
1l:518129~-10
SILICON GATE CMOS
131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
storage. The TC518129AFWI operates from a single 5V power supply. Refreshing is supported by a refresh (RFSHl input which
enables two types of refreshing - auto refresh and self refresh. The TC518129AFWI features a static RAM-like interface with a write
cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface.
A CS standby mode interface is incorporated in the TC518129AFWI, with the CE2 pin in the TC518128A family changed to a CS
pin. The TC518129AFWI is guaranteed over an operating temperature range of -40 - 85°C so the TC518129AFWI is suitable for use
in wide operating temperature systems. It is available in a 32-pin, 0.525 inch small outline plastic flat package.
Features
• Organization: 131,072 words x 8 bits
• Single 5V power supply
• Fast access time
tCEA CE Access Time
100ns
tOEA OE Access Time
40ns
tRC Cycle Time
160ns
Power Dissipation
330mW
Self Refresh Current
200~
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Wide operating temperature:
-40 - 85°C
• Inputs and outputs TIL compatible
• Refresh: 512 refresh cycles/8ms
• Auto refresh power down feature
• Package
- TC518129AFWI: SOP32-P-525
Pin Connection
iffiH
A16
A14
A12
A7
A6
AS
A4
A3
A2
A1
AO
001
002
003
GNO
x~~
CS
RJW
A13
A8
A9
All
Ol
AlO
CE
1108
007
006
1105
1104
Pin Names
AO ~ A16
RlW
DE
RFSH
CE
CS
1/01 ~ 1/08
VDD
GND
Address Inputs
ReadIWrite Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Chip Select Input
Data Inputs/Outputs
Power
Ground
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
0-115



No Preview Available !

TC518129AFWI·10
Static RAM
Operating Mode
~MODE
CE CS OE R/W RFSH AO -A16 1/01 _ 8
Read
Write
CE only Refresh
LHL H *
LH* L *
L HHH *
V* OUT
V" IN
V* HZ
CS Standby
Auto/Self Refresh
L L " " " " HZ
H * * * L " HZ
Standby
H " * * H * HZ
H = High level input (VIH)
L = Low level input (VIU
*
V*
==VAtIHthoerVfaILlling edge of CE, all address inputs are latched. At all other times, the address inputs are "*".
HZ = High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
TSOLOER Soldering Temperature' Time
Po Power Dissipation
lOUT Short Circuit Output Current
RATING
-1.0 - 7.0
-1.0 - 7.0
-1.0-7.0
-40 - 85
-55 - 150
260· 10
600
50
UNIT NOTES
V
V
V
°C
1
°C
°C'sec
mW
mA
0·116
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.



No Preview Available !

Static RAM
TC518129AFWI-10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
2.4 - Voo + 1.0 V
-1.0 - 0.8 V
2
DC Characteristics (Ta =-40 - 85°C, Voo =5V±10%)
SYMBOL
PARAMETER
1000
100s1
100s2
100F1
100F2
100F3
100F4
II(L)
10(L)
VOH
VOL
Operating Current (Average)
CE, Address cycling: tRC = tRC min.
Standby Current
CE = VIH. RFSR = VIH
Standby Current
CE = Voo - 0.2V,
RFSH = Voo - 0.2V
Self Refresh Current (Average)
CE = VIH,
RFSH = VIL
Self Refresh Current (Average)
CE = Voo - 0.2V,
RFSH = 0.2V
Auto Refresh Current (Average)
RFSR cycling: tFC = tFC min
cr only Refresh Current (Average)
cr, Address cycling: tRC = tRC min.
Input Leakage Current
OV ~ VIN ~ Voo, All other Inputs not under test = OV
Output Leakage Current
(crOutput Disabled
= VIH or OE = VIH or RIW = Vld,
OV ~ VOUT ~ Voo
Output High Level
10H = -5mA
Output Low Level
10L = 4.2mA
MIN. TYP.
- 40
--
- 100
--
- 100
--
- 40
--
--
2.4 -
--
MAX.
60
1
200
1
200
2
60
±10
±10
-
0.4
UNIT NOTES
mA 3,4
mA
J.1A
mA
J.1A
mA
mA 3
J.1A
J.1A
V
V
Capacitance* (Voo =5V, Ta =25°C, f = 1MHz)
SYMBOL
PARAMETER
CI1 Input CapaCitance (AO - A16)
CI2 Input CapaCitance (cr, CS, OE, RIW, 'F1F'SR)
CIO Input/Output CapaCitance
'This parameter is periodically sampled and is not 100% tested.
MIN. MAX.
-5
-7
-7
UNIT
pF
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
D-117



No Preview Available !

TC5181.29AFWI-10
Static RAM
AC Characteristics (Ta =-40 - 85°C, Voo =5V±10%) (Notes: 5,6,7,8)
SYMBOL
PARAMETER
-10
MIN. MAX.
UNIT NOTES
tRC
tRMW
tCE
tp
tCEA
toEA
tCLZ
tOLZ
twLZ
tCHZ
tOHZ
tWHZ
toOS
tOOH
tRCS
tRCH
tcss
tCSH
twp
tWCH
tCWL
tosw
tosc
tOHW
tOHC
tASC
tAHC
tRHC
tFC
tRFO
tFAP
tFP
tFAS
tFRS
tREF
tT
Random Read, Write Cycle Time
Read Modify Write Cycle Time
C'E" Pulse Width
C'E" Precharge Time
C'E" Access Time
~ Access Time
C'E" to Output in Low -Z
~ to Output in Low -Z
Output Active from End of Write
Chip Disable to Output in High-Z
~ Disable to Output in High-Z
Write Enable to Output in High-Z
~ Output Disable Setup Time
OE Output Disable Hold Time
Read Command Setup Time
Read Command Hold Time
Chip Select Setup Time
Chip Select Hold Time
Write Pulse Width
Write Command Hold Time
Write Command to C'E" Lead Time
Data Setup Time from RIW
Data Setup Time from CE
Data Hold Time from RIW
Data Hold Time from CE
Address Setup Time
Address Hold Time
RFS'R Command Hold Time
Auto Refresh Cycle Time
RrnR Delay Time from C'E"
RF'SR Pulse Width (Auto Refresh)
RFSH Precharge Time
'FWSR Pulse Width (Self Refresh)
CE Delay Time from 'i1FSH (Self Refresh)
Refresh Period (512 cycles, AO - A8)
Transition Time (Rise and Fall)
160
235
100
50
-
-
30
0
0
0
0
0
0
10
0
0
0
25
70
70
70
35
35
0
0
°25
15
160
50
30
30
8,000
190
-
3
-
-
10,000
-
100
40
-
-
-
30
30
30
-
-
-
-
-
-
-
10,000
10,000
-
-
-
-
-
-
-
-
-
8,000
-
-
-
8
50
f----
f----
~
f----
f----
f----
f----
f----
f----
9
t------
9
f----
9
t------
t------
f----
t------
t------
ns f - - - -
f----
t------
f----
f----
10
t------
10
I---
10
f----
10
t------
11
f----
- 11
-
-
-
- 12
- 12
- 12
12
ms
ns
D-118
TDSI1IBA AMERICA ELECTRONIC COMPDNENTS. INC.



TC518129AFWI-10 datasheet pdf
Download PDF
TC518129AFWI-10 pdf
View PDF for Mobile


Related : Start with TC518129AFWI-1 Part Numbers by
TC518129AFWI-10 SILICON GATE CMOS PSEUDO STATIC RAM TC518129AFWI-10
Toshiba
TC518129AFWI-10 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact