TC5117400BST Datasheet PDF - Toshiba Semiconductor

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TC5117400BST
Toshiba Semiconductor

Part Number TC5117400BST
Description DYNAMIC RAM
Page 21 Pages


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TOSHIBA
TC5117400BSJ/BST-60/70
4,194,304 WORD X 4 BIT DYNAMIC RAM
PRELIMINARY
Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti-
lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin
plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is compatible
with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V± 10%
tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
Features
• 4,194,304 word by 4 bit organization
• Fast access time and cycle time
• Single power supply of 5V± 10% with a built-in
VBB generator
• Low Power
- 605mW MAX. Operating
- (TC5117400BSJ/BST-60)
- 523mW MAX. Operating
- (TC5117400BSJ/BST-70)
- 5.5mW MAX. Standby
• Outputs unlatched at cycle end allows two-
dimensional chip selection
• Common I/O capability using “EARLY WRITE”
operation
• Read-Modify-Write, CAS before RAS refresh,
RAS-only refresh, Hidden refresh, Fast Page
Mode and Test Mode capability
• All inputs and outputs TTL compatible
• 2048 refresh cycles/32ms
• Package TC5117400BSJ: SOJ26-P-300C
TC5117400BST: TSOP26-P-300D
Key Parameters
ITEM
tRAC
tAA
RAS Access Time
Column Address
Access Time
tCAC
tRC
tPC
CAS Access Time
Cycle Time
Fast Page Mode
Cycle Time
TC5117400BSJ/BST
-60
60ns
-70
70ns
30ns
35ns
15ns
110ns
20ns
130ns
40ns
45ns
1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi-
rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited.
2. LIFE SUPPORT POLICY
Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of Toshiba America, Inc. Life support sys-
tems are either systems intended for surgical implant in the body or systems which sustain life.
A critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness.
3. The information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. All information in this data book
is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for the use of any license under the patent rights of Toshiba or any third parties.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
1



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TC5117400BSJ/BST-60/70
Pin Name
A0 ~ A10
RAS
CAS
WE
OE
I/O1~I/O4
VCC
VSS
Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Input/Output
Power (+5V)
Ground
Pin Connection (Top View)
Standard DRAM
DR16040794
2
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
PRELIMINARY



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DR16040794
Block Diagram
Standard DRAM
TC5117400BSJ/BST-60/70
Absolute Maximum Ratings
ITEM
Input Voltage
Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
SYMBOL
VIN
VOUT
VCC
TOPR
TSTG
TSOLDER
PD
IOUT
RATING
-0.5~VCC+0.5
-0.5~VCC+0.5
-0.5~7.0
0~70
-55~150
260
900
50
UNIT
V
V
V
°C
°C
°C
mW
mA
NOTE
1
1
1
1
1
1
1
1
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
3



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TC5117400BSJ/BST-60/70
Standard DRAM
Recommended DC Operating Conditions (Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
MIN.
VCC Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
*VCC + 2.0V at pulse width 20ns (pulse width is measured at VCC).
**-2.0V at pulse width 20ns (pulse width is measured at VSS).
4.5
2.4
-0.5**
TYP.
MAX.
UNIT NOTE
5.0 5.5 V
- VCC + 0.5* V
- 0.8 V
2
2
2
DR16040794
DC Electrical Characteristics (VCC = 5V ± 10%, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
|CC1
|CC2
|CC3
|CC4
|CC5
|CC6
|I (L)
|O (L)
VOH
VOL
OPERATING CURRENT
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: tRC=tRC MIN)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=VIH)
RAS ONLY REFRESH CURRENT
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS=VIH: tRC=tRC MIN.)
FAST PAGE MODE CURRENT
Average Power Supply Current, Fast Page Mode
(RAS =VIL, CAS, Address Cycling: tPC=tPC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=VCC-0.2V)
CAS BEFORE RAS REFRESH CURRENT
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: tRC=tRC MIN.)
INPUT LEAKAGE CURRENT
Input Leakage Current, any input
(0V<VIN<VCC, All Other Pins Not Under Test=0V)
OUTPUT LEAKAGE CURRENT
(DOUT is disabled, (0VVOUT<VCC)
OUTPUT LEVEL
Output “H” Level Voltage (IOUT=-5mA)
OUTPUT LEVEL
Output “L” Level Voltage (IOUT=4.2mA)
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST-70
TC5117400BSJ/BST-60
TC5117400BSJ/BST70
MIN MAX UNIT NOTE
-
-
110
mA
95
3,4
5
– 2 mA
- 110
mA 3, 5
- 95
-
-
70
60
mA
3,4
5
– 1 mA
- 110
- 95 mA 3, 5
-10 10
µA
-10 10
2.4 -
- 0.4
µA
V
V
4
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
PRELIMINARY



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