T2960BB45E Datasheet PDF - IXYS


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T2960BB45E
IXYS

Part Number T2960BB45E
Description Insulated Gate Bi-Polar Transistor
Page 6 Pages

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Date:- 28 May, 2016
Data Sheet Issue:- A2
Advance data
Insulated Gate Bi-Polar Transistor
Type T2960BB45E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC
ICRM
IECO
PMAX
Tj op
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (note 2)
Operating temperature range
Storage temperature range
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
3000
6000
3000
23.8
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Provisional Data Sheet T2960BB45E Issue A2
Page 1 of 6
May, 2016



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Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Insulated Gate Bi-polar Transistor Type T2960BB45E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.6
-
-
5.1
55
-
495
1.1
2.2
13
11.5
5.3
2.5
18
17.5
10.9
MAX
3.15
4.0
1.84
0.73
-
85
±35
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 3000A, VGE = 15V, Tj = 25°C
IC = 3000A, VGE = 15V
Current range: 1000A 3000A
VCE = VGE, IC = 300mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =3000A, VCE =2800V, di/dt=5000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 1.3Rg(OFF)=6.8CGE=330nF
Freewheel diode type E2400TC45C at
Tj=125°C.
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
kA
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
75
-
TYP
-
-
-
-
2.8
MAX
4.2
6.87
10.9
85
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
UNITS
K/kW
K/kW
K/kW
kN
kg
Provisional Data Sheet T2960BB45E Issue A2
Page 2 of 6
May, 2016



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Curves
Figure 1 Typical collector-emitter saturation voltage
characteristics
10000
T2960BB45E
Issue A2
VGE=+15V
1000
25°C
125°C
100
Insulated Gate Bi-polar Transistor Type T2960BB45E
Figure 2 Typical output characteristic
5000
T2960BB45E
Issue A2
Tj =25°C
4000
3000
2000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
1000
10
0
123456
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 Typical output characteristic
5000
T2960BB45E
Issue A2
Tj =125°C
4000
3000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
0
01234
Collector to emitter saturation voltage - VCE(sat)(V)
Figure 4 Typical turn-on delay time vs gate
resistance
10
VCE=2800V
VGE=±15V
CGE=330nF
Tj=125°C
T2960BB45E
Issue A2
IC=3000A
8
IC=1500A
6
2000
4
1000
2
0
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
0
0
Provisional Data Sheet T2960BB45E Issue A2
Page 3 of 6
2468
Gate resistance - RG(on) ()
10
May, 2016



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Figure 5 Typical turn-off delay time vs. gate
resistance
14
T2960BB45E
Issue A2
VCE=2800V
VGE=±15V
CGE=330nF
12 Tj=125°C
IC=1500A
IC=3000A
10
8
6
Insulated Gate Bi-polar Transistor Type T2960BB45E
Figure 6 Typical turn-on energy vs. collector current
15
RG(on)=1.3.
CGE=330nF
VGE=±15V
Tj=125°C
T2960BB45E
Issue A2
VCE=2800V
10
VCE=2000V
5
VCE=1000V
4
5 10 15 20 25
Gate resistance - RG(off) ()
0
0
1000
2000
3000
4000
Collector current - IC (A)
vFigure 7 Typical turn-on energy vs. di/dt
70
T2960BB45E
Issue A2
VCE=2800V
60 VGE=±15V
Tj=125°C
50
40
IC=3000A
30
20
IC=1500A
10
Figure 8 Typical turn-off energy vs. collector current
20
T2960BB45E
Issue A2
RG(off)=6.8
CGE=330nF
VGE=±15V
15 Tj=125°C
VCE=2800V
VCE=2000V
10
VCE=1000V
5
0
0
1000
2000
3000
4000
5000
6000
Commutation rate - di/dt (A/µs)
0
0
1000
2000
3000
4000
Collector current - IC (A)
Provisional Data Sheet T2960BB45E Issue A2
Page 4 of 6
May, 2016




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