T2400GB45E Datasheet PDF - IXYS


www.Datasheet-PDF.com

T2400GB45E
IXYS

Part Number T2400GB45E
Description Insulated Gate Bi-Polar Transistor
Page 6 Pages

T2400GB45E datasheet pdf
View PDF for PC
T2400GB45E pdf
View PDF for Mobile


No Preview Available !

Date:- 27 Nov, 2014
Data Sheet Issue:- 2
Insulated Gate Bi-Polar Transistor
Type T2400GB45E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC
ICRM
IECO
PMAX
Tj op
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (note 2)
Operating temperature range
Storage temperature range
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
2400
4800
2400
19
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Data Sheet T2400GB45E Issue 2
Page 1 of 6
November, 2014



No Preview Available !

Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Insulated Gate Bi-polar Transistor Type T2400GB45E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.6
-
-
5.1
45
-
400
1.4
3.2
18
13
4.6
2.6
14
13
9500
MAX
3.2
4.0
1.49
1.05
-
70
±30
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 2400A, VGE = 15V, Tj = 25°C
IC = 2400A, VGE = 15V
Current range: 800A – 2400A
VCE = VGE, IC = 250mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =2400A, VCE =2800V, di/dt=4000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 2.2Ω, Rg(OFF)=8.2Ω, CGE=267nF
Freewheel diode type E2400TC45C at
Tj=125°C.
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
50
-
TYP
-
-
-
-
2
MAX
5.2
8.5
13.5
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
UNITS
K/kW
K/kW
K/kW
kN
kg
Data Sheet T2400GB45E Issue 2
Page 2 of 6
November, 2014



No Preview Available !

Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T2400GB45E
Issue 2
VGE=+15V
25°C
125°C
1000
Insulated Gate Bi-polar Transistor Type T2400GB45E
Figure 2 – Typical output characteristic
6000
T2400GB45E
Issue 2
Tj =25°C
5000
4000
3000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
2000
1000
100
0
12345
Collector to emitter saturation voltage - VCE(sat) (V)
6
0
0123456
Collector to emitter saturation voltage - VCE(sat)(V)
Figure 3 – Typical output characteristic
6000
T2400GB45E
Issue 2
Tj =125°C
5000
4000
3000
2000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
Figure 4 – Typical turn-on delay time vs gate
resistance
15
VCE=2800V
VGE=±15V
CGE=267nF
Tj=125°C
T2400GB45E
Issue 2
IC=2400A
IC=1500A
10
5
1000
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
0
0 2 4 6 8 10 12 14
Gate resistance - RG(on) ()
Data Sheet T2400GB45E Issue 2
Page 3 of 6
November, 2014



No Preview Available !

Figure 5 – Typical turn-off delay time vs. gate
resistance
14
T2400GB45E
Issue 2
VCE=2800V
VGE=±15V
12 CGE=267nF
Tj=125°C
IC=2400A
IC=1500A
10
8
Insulated Gate Bi-polar Transistor Type T2400GB45E
Figure 6 – Typical turn-on energy vs. collector current
15
T2400GB45E
Issue 2
RG(on)=2.2
CGE=267nF
VGE=±15V
Tj=125°C
VCE=2800V
10
VCE=2000V
65
VCE=1000V
4
2
5 10 15 20 25 30
Gate resistance - RG(off) ()
0
0
1000
2000
Collector current - IC (A)
3000
Figure 7 – Typical turn-on energy vs. di/dt
50
T2400GB45E
Issue 2
VCE=2800V
VGE=±15V
Tj=125°C
40
30
Figure 8 – Typical turn-off energy vs. collector current
15
T2400GB45E
Issue 2
RG(off)=8.2
CGE=267nF
VGE=±15V
Tj=125°C
VCE=2800V
10 VCE=2000V
20
IC=2400A
10
IC=1500A
0
0
1000
2000
3000
4000
5000
Commutation rate - di/dt (A/µs)
5
0
0
Data Sheet T2400GB45E Issue 2
Page 4 of 6
VCE=1000V
1000
2000
Collector current - IC (A)
3000
November, 2014




T2400GB45E datasheet pdf
Download PDF
T2400GB45E pdf
View PDF for Mobile


Similiar Datasheets : T2400GB45E

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact