T2250AB25E Datasheet PDF - IXYS


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T2250AB25E
IXYS

Part Number T2250AB25E
Description Insulated Gate Bi-Polar Transistor
Page 6 Pages

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WESTCODE
An IXYS Company
Date:- 25 Jan, 2011
Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T2250AB25E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tjop
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM
LIMITS
2250
4500
2250
11.8
-40 to +125
-40 to +125
UNITS
A
A
A
KW
°C
°C
Prospective Data Sheet T2250AB25E Issue P1
Page 1 of 6
January, 2011



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Insulated Gate Bi-polar Transistor Type T2250AB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.05
2.90
-
-
5.8
20
10
300
1.2
2.7
17
5.3
1.8
8.5
16
3.7
6300
MAX
2.35
3.20
1.29
0.85
6.3
60
±30
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 2250A, VGE = 15V, Tj = 25°C
IC = 2250A, VGE = 15V
Current range: 750 – 2250A
VCE = VGE, IC = 200mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =2250A, VCE =1250V, di/dt=4000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 1.2Ω, Rg(OFF)=3.3Ω, CGE=100nF
Freewheel diode type E2250VF25C
(Note 3)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
25
-
TYP
-
-
-
-
1.5
MAX
8.45
13.3
24.5
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Prospective Data Sheet T2250AB25E Issue P1
Page 2 of 6
January, 2011



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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T2250AB25E
Issue P1
VGE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T2250AB25E
Figure 2 – Typical output characteristic
5000
T2250AB25E
Issue P1
Tj =25°C
4000
1000
3000
100
2000
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
10
0
1234
Collector to emitter saturation voltage - VCE(sat) (V)
5
Figure 3 – Typical output characteristic
5000
T2250AB25E
Issue P1
Tj =125°C
4000
0
01234
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
6
VCE=1250V
IC=2250A
VGE=±15V
CGE=100nF
Tj=125°C
5
T2250AB25E
Issue P1
3000
2000
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
4
3
2
1
0
0123456
Gate resistance - RG(on) ()
Prospective Data Sheet T2250AB25E Issue P1
Page 3 of 6
January, 2011



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Figure 5 – Typical turn-off delay time vs. gate
resistance
4
VCE=1250V
VGE=±15V
IC=2250A
CGE=100nF
Tj=125°C
T2250AB25E
Issue P1
3
Insulated Gate Bi-polar Transistor Type T2250AB25E
Figure 6 – Typical turn-on energy vs. collector
current
6000
5000
T2250AB25E
Issue P1
RG(on)=1.2
CGE=100nF
VGE=±15V
Tj=125°C
VCE=1250V
4000
VCE=900V
2 3000
VCE=600V
2000
1
1000
0
13579
Gate resistance - RG(off) ()
Figure 7 – Typical turn-on energy vs. di/dt
15000
T2250AB25E
Issue P1
VCE=1250V
VGE=±15V
Tj=125°C
0
500
1000
1500
2000
Collector current - IC (A)
2500
Figure 8 – Typical turn-off energy vs. collector
current
5000
RG(off)=3.3
CGE=100nF
VGE=±15V
Tj=125°C
T2250AB25E
Issue P1
4000
VCE=1250V
10000
3000
VCE=1000V
5000
IC=2250A
2000
VCE=600V
IC=1200A
1000
0
0
1000
2000
3000
4000
5000
Commutation rate - di/dt (A/µs)
0
500
1000
1500
2000
Collector current - IC (A)
2500
Prospective Data Sheet T2250AB25E Issue P1
Page 4 of 6
January, 2011




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