T1800GB45A Datasheet PDF - IXYS


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T1800GB45A
IXYS

Part Number T1800GB45A
Description Insulated Gate Bi-Polar Transistor
Page 8 Pages

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Date:- 12 Nov, 2014
Data Sheet Issue:- 1
Insulated Gate Bi-Polar Transistor
Type T1800GB45A
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
1800
3600
1800
3600
25.7
28.3
13.7
3500
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Data Sheet T1800GB45A Issue 1
Page 1 of 8
November, 2014



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Insulated Gate Bi-polar Transistor Type T1800GB45A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.60
-
-
5.1
45
-
280
1.5
3.3
12.5
11
4.7
2.5
10
10.5
5500
MAX
3.2
4.0
1.82
1.21
-
70
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1800A, VGE = 15V, Tj = 25°C
IC = 1800A, VGE = 15V
Current range: 600A – 1800A
VCE = VGE, IC = 180mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1800A, VCE =2800V, di/dt=3000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 3Ω, Rg(OFF)=11Ω, CGE=183nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.7
3.9
-
-
1600
2000
1.6
2.8
MAX
4.0
4.2
2.27
1.07
-
-
-
-
TEST CONDITIONS
IF = 1800A, Tj =25°C
IF = 1800A
Current range 600A - 1800A
IF = 1800A, Vr = 2800V, VGE = -15V,
di/dt=3000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
50
-
TYP
-
-
-
-
-
-
-
2
MAX
7.3
11.9
19
14.4
22.3
41.1
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T1800GB45A Issue 1
Page 2 of 8
November, 2014



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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T1800GB45A
Issue 1
VGE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T1800GB45A
Figure 2 – Typical output characteristic
3000
T1800GB45A
Issue 1
Tj =25°C
1000
2000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100 1000
10
0
12345
Collector to emitter saturation voltage - VCE(sat) (V)
6
Figure 3 – Typical output characteristic
3000
T1800GB45A
Issue 1
Tj =125°C
2000
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
20
VCE=2800V
VGE=±15V
CGE=183nF
Tj=125°C
T1800GB45A
Issue 1
IC=1800A
15
IC=1000A
10
5
0
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
0
0 5 10 15 20 25
Gate resistance - RG(on) (W)
Data Sheet T1800GB45A Issue 1
Page 3 of 8
November, 2014



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Figure 5 – Typical turn-off delay time vs. gate
resistance
12
VCE=2800V
VGE=±15V
CGE=183nF
Tj=125°C
T1800GB45A
Issue 1
IC=1800A
10
IC=1000A
Insulated Gate Bi-polar Transistor Type T1800GB45A
Figure 6 – Typical turn-on energy vs. collector current
15
RG(on)=3
CGE=183nF
VGE=±15V
Tj=125°C
T1800GB45A
Issue 1
VCE=2800V
10
8
VCE=2000V
5
6
VCE=1000V
4
5 10 15 20 25 30 35 40
Gate resistance - RG(off) ()
0
0
500
1000
1500
2000
2500
Collector current - IC (A)
Figure 7 – Typical turn-on energy vs. di/dt
50
T1800GB45A
Issue 1
VCE=2800V
VGE=±15V
Tj=125°C
40
30
20
IC=1800A
10
IC=1000A
Figure 8 – Typical turn-off energy vs. collector current
12
RG(off)=11
CGE=183nF
VGE=±15V
Tj=125°C
10
T1800GB45A
Issue 1
VCE=2800V
8 VCE=2000V
6
VCE=1000V
4
2
0
0
1000
2000
3000
Commutation rate - di/dt (A/µs)
Data Sheet T1800GB45A Issue 1
4000
0
0
Page 4 of 8
500
1000
1500
2000
Collector current - IC (A)
2500
November, 2014




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