T1600GB45G Datasheet PDF - IXYS


www.Datasheet-PDF.com

T1600GB45G
IXYS

Part Number T1600GB45G
Description Insulated Gate Bi-Polar Transistor
Page 8 Pages

T1600GB45G datasheet pdf
View PDF for PC
T1600GB45G pdf
View PDF for Mobile


No Preview Available !

Date:- 10 Nov, 2014
Data Sheet Issue:- 1
Insulated Gate Bi-Polar Transistor
Type T1600GB45G
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
1600
3200
1600
3200
30
33
12.8
3000
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Data Sheet T1600GB45G Issue 1
Page 1 of 8
November, 2014



No Preview Available !

Insulated Gate Bi-polar Transistor Type T1600GB45G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.50
-
-
5.1
45
-
270
2.2
4.4
9
12
4.8
2.6
10
8.7
5000
MAX
3.2
3.9
1.79
1.32
-
70
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1600A, VGE = 15V, Tj = 25°C
IC = 1600A, VGE = 15V
Current range: 530A – 1600A
VCE = VGE, IC = 170mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1600A, VCE =2800V, di/dt=2700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 4.3Ω, Rg(OFF)=12Ω, CGE=133nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.3
3.45
-
-
1380
1970
1.7
2.1
MAX
3.6
3.8
2.14
1.04
-
-
-
-
TEST CONDITIONS
IF = 1600A, Tj =25°C
IF = 1600A
Current range 530A - 1600A
IF = 1600A, Vr = 2800V, VGE = -15V,
di/dt=2700A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
50
-
TYP
-
-
-
-
-
-
-
2
MAX
7.8
12.8
20.3
12.3
19.5
35.7
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T1600GB45G Issue 1
Page 2 of 8
November, 2014



No Preview Available !

Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T1600GB45G
Issue 1
VGE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T1600GB45G
Figure 2 – Typical output characteristic
2500
T1600GB45G
Issue 1
Tj =25°C
2000
1000
1500
100
1000
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
10
0
12345
Collector to emitter saturation voltage - VCE(sat) (V)
6
Figure 3 – Typical output characteristic
2500
T1600GB45G
Issue 1
Tj =125°C
2000
1500
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
15
VCE=2800V
VGE=±15V
CGE=133nF
T j= 1 2 5 ° C
T1600GB45G
Issue 1
1600A
800A
10
1000
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
5
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
0
0
Data Sheet T1600GB45G Issue 1
Page 3 of 8
5 10 15 20
Gate resistance - RG(on) ()
25
November, 2014



No Preview Available !

Figure 5 – Typical turn-off delay time vs. gate
resistance
14
VCE=2800V
VGE=±15V
CGE=133nF
Tj=125°C
T1600GB45G
Issue 1
12
1600A
800A
10
Insulated Gate Bi-polar Transistor Type T1600GB45G
Figure 6 – Typical turn-on energy vs. collector current
15
RG(on)=4.3
CGE=133nF
VGE=±15V
Tj=125°C
T1600GB45G
Issue 1
VCE=2800V
10
VCE=2000V
8
5
VCE=1000V
6
4
0 10 20 30 40 50
Gate resistance - RG(off) ()
0
0
500
1000
1500
2000
Collector current - IC (A)
Figure 7 – Typical turn-on energy vs. di/dt
40
VCE=2800V
VGE=±15V
Tj=125°C
T1600GB45G
Issue 1
30
20
IC=1600A
10
IC=800A
Figure 8 – Typical turn-off energy vs. collector current
10
RG(off)=12
CGE=133nF
VGE=±15V
Tj=125°C
T1600GB45G
Issue 1
VCE=2800V
8
VCE=2000V
6
4
VCE=1000V
2
0
0
1000
2000
3000
4000
Commutation rate - di/dt (A/µs)
0
0
500
1000
1500
2000
Collector current - IC (A)
Data Sheet T1600GB45G Issue 1
Page 4 of 8
November, 2014




T1600GB45G datasheet pdf
Download PDF
T1600GB45G pdf
View PDF for Mobile


Similiar Datasheets : T1600GB45G

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact