T1200TD25A Datasheet PDF - IXYS


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T1200TD25A
IXYS

Part Number T1200TD25A
Description Insulated Gate Bi-Polar Transistor
Page 8 Pages

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Date:- 16 Dec, 2014
Data Sheet Issue:- A1
Advance data
Insulated Gate Bi-Polar Transistor
Type T1200TD25A
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 375nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
1200
2400
1200
2400
7240
7960
5.9
2500
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Provisional Data Sheet T1200TD25A Issue A1
Page 1 of 8
December, 2014



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Insulated Gate Bi-polar Transistor Type T1200TD25A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.45
3.15
-
-
5.8
10
-
150
0.75
2.1
8
1.5
1.3
2.5
6.5
2.1
5000
MAX
2.75
3.45
1.42
1.69
-
30
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V
Current range: 400A – 1200A
VCE = VGE, IC = 100mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1200A, VCE =1250V, di/dt=2000A/µs
VGE = ±15V, Ls=330nH
Rg(ON)= 3Ω, Rg(OFF)=6.2Ω, CGE=47nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
2.45
2.5
-
-
800
840
0.97
0.76
MAX
2.75
2.8
1.59
1.01
-
-
-
-
TEST CONDITIONS
IF = 1200A, Tj =25°C
IF = 1200A
Current range 400A - 1200A
IF = 1200A, Vr = 1250V, VGE = -15V,
di/dt=2000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
15
-
TYP
-
-
-
-
-
-
-
1.2
MAX
16.9
26.5
49
29.2
45.2
84
25
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Provisional Data Sheet T1200TD25A Issue A1
Page 2 of 8
December, 2014



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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T1200TD25A
Issue A1
VGE=+15V
Insulated Gate Bi-polar Transistor Type T1200TD25A
Figure 2 – Typical output characteristic
2500
T1200TD25A
Issue A1
Tj =25°C
25°C
125°C
2000
1000
1500
1000
VGE = 20V
VGE = 17V
100 VGE = 15V
VGE = 13V
VGE = 11V
500
10
0
123456
Collector to emitter saturation voltage - VCE(sat) (V)
7
Figure 3 – Typical output characteristic
2500
T1200TD25A
Issue A1
Tj =125°C
2000
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
5.00
VCE=1250V
IC = 1 2 0 0 A
VGE=±15V
CGE=47nF
T j= 1 2 5 ° C
T1200TD25A
Issue A1
4.00
1200A
600A
1500
3.00
1000
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
2.00
1.00
0
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
0.00
0
2 4 6 8 10 12 14
Gate resistance - R G(on) ()
Provisional Data Sheet T1200TD25A Issue A1
Page 3 of 8
December, 2014



No Preview Available !

Figure 5 – Typical turn-off delay time vs. gate
resistance
5
VCE=1250V
VGE=±15V
IC=1200A
CGE=47nF
Tj=125°C
T1200TD25A
Issue A1
4
600A
Insulated Gate Bi-polar Transistor Type T1200TD25A
Figure 6 – Typical turn-on energy vs. collector current
2.0
T1200TD25A
Issue A1
RG(on)=3
CGE=47nF
VGE=±15V
Tj=125°C
1.5
VCE=1250V
1200A
3 1.0
VCE=900V
2 0.5 VCE=600V
1
0 5 10 15 20 25
Gate resistance - RG(off) ()
0.0
0
500 1000
Collector current - IC (A)
1500
Figure 7 – Typical turn-on energy vs. di/dt
6
VCE=1250V
VGE=±15V
Tj=125°C
T1200TD25A
Issue A1
5
4
Figure 8 – Typical turn-off energy vs. collector current
3
RG(off)=6.2
CGE=47nF
VGE=±15V
Tj=125°C
T1200TD25A
Issue A1
VCE=1250V
2
3
21
1 IC=1200A
IC=600A
00
0
1000
2000
3000
4000
0
Commutation rate - di/dt (A/µs)
VCE=900V
VCE=600V
500 1000
Collector current - IC (A)
1500
Provisional Data Sheet T1200TD25A Issue A1
Page 4 of 8
December, 2014




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