T1200EB45E Datasheet PDF - IXYS


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T1200EB45E
IXYS

Part Number T1200EB45E
Description Insulated Gate Bi-Polar Transistor
Page 6 Pages

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Date:- 19 Oct, 2009
Data Sheet Issue:- 1
Provisional Data
Insulated Gate Bi-Polar Transistor
Type T1200EB45E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
Tj op
Tstg
RATINGS
Continuous DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (note 2)
Operating temperature range
Storage temperature range
Notes: -
1) Unless otherwise indicated Tj = 125ºC
2) Tsink = 25°C, double side cooled
3) The use of an anti-parallel diode is recommended
MAXIMUM
LIMITS
1200
2400
1200
12.5
-40 to +125
-40 to +125
UNITS
A
A
A
kW
°C
°C
Provisional Data Sheet T1200EB45E Issue 1
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October, 2009



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Insulated Gate Bi-polar Transistor Type T1200EB45E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.6
-
-
5.3
20
-
200
1.8
3.0
12
5.7
1.6
2.2
10
5.1
4750
MAX
3.2
4.1
1.69
1.97
-
50
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC =1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V
Current range: 500 – 1500A
VCE = VGE, IC = 125mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1200A, VCE =2800V
VGE = ±15V, Ls=250nH
Rg(ON)= 3.3Ω, Rg(OFF)=3.3Ω, CGE=133nF.
Freewheel diode type E1500VF450.
(Note 3)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
25
-
TYP
-
-
-
-
1.2
MAX
8.0
12.5
23.3
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
UNITS
K/kW
K/kW
K/kW
kN
kg
Provisional Data Sheet T1200EB45E Issue 1
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October, 2009



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Curves
Figure 1 – Typical collector-emitter saturation
voltage characteristics
10000
T1200EB45E
AD Issue 1
VGE = +15V
Insulated Gate Bi-polar Transistor Type T1200EB45E
Figure 2 – Typical output characteristic
3000
T1200EB45E
AD Issue 1
Tj =25°C
1000
Tj =25°C
Tj =125°C
2000
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
0
12345
Collector to emitter saturation voltage - VCE(SAT) (V)
6
Figure 3 – Typical output characteristic
3000
T1200EB45E
AD Issue 1
Tj =125°C
2000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
1000
0
0123456
Collector to emitter saturation voltage - VCE(SAT) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
6
T1200EB45E
AD Issue 1
VCE=2800V
VGE=±15V
CGE=133nF
5 Tj=125°C
IC=1200A
IC=800A
4
3
2
0
01234567
Collector to emitter saturation voltage - VCE(SAT) (V)
1
2 4 6 8 10 12 14 16
Gate resistance - RG(on) ()
Provisional Data Sheet T1200EB45E Issue 1
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October, 2009



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Figure 5 – Typical turn-off delay time vs. gate
resistance
3.5
T1200EB45E
AD Issue 1
VCE=2800V
VGE=±15V
CGE=133nF
3 Tj=125°C
IC=1200A
Insulated Gate Bi-polar Transistor Type T1200EB45E
Figure 6 – Typical turn-on energy vs. collector
current
6000
5000
T1200EB45E
AD Issue 1
RG(on)=3.3
CGE=133nF
VGE=±15V
Tj=125°C
VCE=3000V
IC=800A
4000
2.5
3000
VCE=2000V
2
2000
VCE=1000V
1.5
1000
1
2 4 6 8 10 12 14 16
Gate resistance - RG(off) ()
Figure 7 – Typical turn-on energy vs. di/dt
15000
IC=1200A
T1200EB45E
AD Issue 1
VCE=2800V
VGE=±15V
Tj=125°C
0
0
500
1000
1500
Collector current - IC (A)
Figure 8 – Typical turn-off energy vs. collector
current
6000
5000
T1200EB45E
AD Issue 1
RG(on)=3.3
CGE=133nF
VGE=±15V
Tj=125°C
VCE=3000V
10000
5000
IC=800A
4000
3000
2000
1000
VCE=2000V
VCE=1000V
0
0
1000
2000
Commutation rate - di/dt (A/µs)
Provisional Data Sheet T1200EB45E Issue 1
3000
0
0
Page 4 of 6
500 1000
Collector current - IC (A)
1500
October, 2009




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