T0800EB45G Datasheet PDF - IXYS


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T0800EB45G
IXYS

Part Number T0800EB45G
Description Insulated Gate Bi-Polar Transistor
Page 7 Pages

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WESTCODE
An IXYS Company
Date:- 3 March, 2012
Data Sheet Issue: - 1
Insulated Gate Bi-Polar Transistor
Type T0800EB45G
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
IC(DC)
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
4500
2800
±20
MAXIMUM
LIMITS
800
1600
800
1600
5720
6300
6.4
2000
-40 to +125
-40 to +125
UNITS
V
V
V
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Data Sheet T0800EB45G Issue 1
Page 1 of 7
March, 2012



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Insulated Gate Bi-polar Transistor Type T0800EB45G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.50
-
-
5.2
20
-
135
1.8
3.3
5
6.3
3.0
2.4
8
3.7
2800
MAX
3.2
3.9
1.74
2.70
-
50
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V
Current range: 267 - 800A
VCE = VGE, IC = 85mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =800A, VCE =2800V, di/dt=1700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 5.6Ω, Rg(OFF)=5.6Ω, CGE=90nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.35
3.5
-
-
800
1020
1.5
1.2
MAX
3.6
3.8
2.05
2.19
-
-
-
-
TEST CONDITIONS
IF = 800A, Tj =25°C
IF = 800A
Current range 267 - 800A
IF = 800A, VGE = -15V, di/dt=1700A/µs
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
25
-
TYP
-
-
-
-
-
-
-
1.2
MAX
15.6
25.4
40.5
24.7
37.9
70.8
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
UNITS
V
V
V
m
A
µC
µs
J
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Data Sheet T0800EB45G Issue 1
Page 2 of 7
March, 2012



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Insulated Gate Bi-polar Transistor Type T0800EB45G
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0800EB45G
Issue 1
VGE=+15V
Figure 2 – Typical output characteristic
2000
T0800EB45G
Issue 1
Tj =25°C
1000
25°C
125°C
1500
100
10
1000
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
1
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
2000
T08000EB45G
Issue 1
Tj =125°C
1500
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
10
VCE=2800V
VGE=±15V
CGE=90nF
T j= 1 2 5 °C
T0800EB45G
Issue 1
8 800A
400A
6
1000
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
4
500
2
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
0
0
Data Sheet T0800EB45G Issue 1
Page 3 of 7
5 10 15 20
Gate resistance - RG(on) ()
25
March, 2012



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Figure 5 – Typical turn-off delay time vs. gate
resistance
6
VCE=2800V
VGE=±15V
CGE=90nF
Tj=125°C
T0800EB45G
Issue 1
800A
5 400A
Insulated Gate Bi-polar Transistor Type T0800EB45G
Figure 6 – Typical turn-on energy vs. collector current
8 RG(on)=5.6
CGE=90nF
VGE=±15V
Tj=125°C
T0800EB45G
Issue 1
VCE=2800V
6
VCE=2000V
44
3 2 VCE=1000V
2
0 5 10 15 20 25
Gate resistance - RG(off) ()
0
0 200 400 600 800 1000
Collector current - IC (A)
Figure 7 – Typical turn-on energy vs. di/dt
15
VCE=2800V
VGE=±15V
Tj=125°C
T0800EB45G
Issue 1
Figure 8 – Typical turn-off energy vs. collector current
5
RG(off)=5.6
CGE=90nF
VGE=±15V
Tj=125°C
T0800EB45G
Issue 1
4 VCE=2800V
10
3
VCE=2000V
IC=800A
2
5
VCE=1000V
IC=400A
1
0
0
500
1000
1500
Commutation rate - di/dt (A/µs)
Data Sheet T0800EB45G Issue 1
2000
0
0
Page 4 of 7
200 400 600 800
Collector current - IC (A)
1000
March, 2012




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