T0570VD25G Datasheet PDF - IXYS


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T0570VD25G
IXYS

Part Number T0570VD25G
Description Insulated Gate Bi-Polar Transistor
Page 8 Pages

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Date:- 4 Sep, 2015
Data Sheet Issue:- A1
Advance data
Insulated Gate Bi-Polar Transistor
Type T0570VD25G
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
2500
1250
±20
UNITS
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 750nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
570
1140
570
1140
5180
5700
2.96
1250
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Provisional Data Sheet T0570VD25G Issue A1
Page 1 of 8
September, 2015



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Insulated Gate Bi-polar Transistor Type T0570VD25G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.40
3.05
-
-
5.8
8
-
75
0.7
1.6
2.4
0.44
1.8
1.9
4.5
1.05
1750
MAX
2.70
3.35
1.42
3.39
-
20
±10
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 570A, VGE = 15V, Tj = 25°C
IC = 570A, VGE = 15V
Current range: 190A – 570A
VE = VGE, IC = 50mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =570A, VCE =1250V, di/dt=1000A/µs
VGE = ±15V, Ls=750nH
Rg(ON)= 6.2Ω, Rg(OFF)=13Ω, CGE=15nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
2.1
2.07
-
-
400
420
1.2
0.37
MAX
2.4
2.37
1.41
1.69
-
-
-
-
TEST CONDITIONS
IF = 570A, Tj =25°C
IF = 570A
Current range 190A - 570A
IF = 570A, Vr = 1250V, VGE = -15V,
di/dt=1000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
11
-
TYP
-
-
-
-
-
-
-
0.65
MAX
33.8
53
98
36.5
56.5
105
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Provisional Data Sheet T0570VD25G Issue A1
Page 2 of 8
September, 2015



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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
10000
T0570VD25G
Issue A1
VGE=+15V
Insulated Gate Bi-polar Transistor Type T0570VD25G
Figure 2 – Typical output characteristic
1500
T0570VD25G
Issue A1
Tj =25°C
1000
25°C
125°C
1000
100
10
500
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
1500
T0570VD25G
Issue A1
Tj =125°C
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
5
VCE=1250V
IC=570A
VGE=±15V
CGE=15nF
Tj=125°C
T0570VD25G
Issue A1
4
1000
570A
300A
3
VGE = 20V
500 VGE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
2
1
0
0123456
Collector to emitter saturation voltage - VCE(sat) (V)
0
0 5 10 15 20 25 30
Gate resistance - RG(on) ()
Provisional Data Sheet T0570VD25G Issue A1
Page 3 of 8
September, 2015



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Figure 5 – Typical turn-off delay time vs. gate
resistance
4
VCE=1250V
VGE=±15V
IC=570A
CGE=15nF
Tj=125°C
T0570VD25G
Issue A1
570A
300A
3
Insulated Gate Bi-polar Transistor Type T0570VD25G
Figure 6 – Typical turn-on energy vs. collector current
0.6
T057VD25G
Issue A1
RG(on)=6.2
CGE=15nF
0.5 VGE=±15V
Tj=125°C
VCE=1250V
0.4
0.3
2 0.2 VCE=900V
VCE=600V
0.1
1
10
15 20 25 30 35
Gate resistance - RG(off) ()
40
0.0
0
200 400 600
Collector current - IC (A)
800
Figure 7 – Typical turn-on energy vs. di/dt
2
VCE=1250V
VGE=±15V
Tj=125°C
T0570VD25G
Issue A1
1.5
Figure 8 – Typical turn-off energy vs. collector current
1.5
RG(off)=13
CGE=15nF
VGE=±15V
Tj=125°C
T0570VD25G
Issue A1
VCE=1250V
1.0
1
0.5
0
0
IC=570A
IC=300A
500 1000
Commutation rate - di/dt (A/µs)
1500
VCE=900V
0.5 VCE=600V
0.0
0
200 400 600
Collector current - IC (A)
800
Provisional Data Sheet T0570VD25G Issue A1
Page 4 of 8
September, 2015




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