T0160NB45A Datasheet PDF - IXYS


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T0160NB45A
IXYS

Part Number T0160NB45A
Description Insulated Gate Bi-Polar Transistor
Page 7 Pages

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Date:- 6 Nov, 2015
Data Sheet Issue:- 2
Insulated Gate Bi-Polar Transistor
Type T0160NB45A
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C T j initial.
MAXIMUM
LIMITS
160
320
160
320
690
760
1.47
300
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Data Sheet T0160NB45A Issue 2
Page 1 of 7
November, 2015



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Characteristics
Insulated Gate Bi-polar Transistor Type T0160NB45A
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.70
3.40
-
-
5.2
5
-
30
2.4
3.2
1.2
1.1
2.3
2.5
1.5
0.7
550
MAX
3.15
3.80
1.71
13.1
-
15
±4
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 160A, VGE = 15V, Tj = 25°C
IC = 160A, VGE = 15V
Current range: 53.3 – 160A
VCE = VGE, IC = 18mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =160A, VCE =2800V, di/dt=300A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 33Ω, Rg(OFF)=38Ω, CGE=22nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.65
3.90
-
-
165
270
1.8
0.38
MAX
3.95
4.20
2.28
12
-
-
-
-
TEST CONDITIONS
IF = 160A, Tj =25°C
IF = 160A
Current range 53.3 - 160A
IF = 160A, VGE = -15V, di/dt=300A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
RthJK Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
8
-
TYP
-
-
-
-
-
-
-
0.5
MAX
72
118
186
172
268
478
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T0160NB45A Issue 2
Page 2 of 7
November, 2015



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Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
1000
T0160NB45A
Issue 2
VGE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 2 – Typical output characteristic
400
T0160NB45A
Issue 2
Tj =25°C
300
100
200
VGE = 20V
VGE = 17V
VGE = 15V
10 VGE = 13V
VGE = 11V
100
1
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 3 – Typical output characteristic
400
T0160NB45A
Issue 2
T j= 1 2 5 °C
300
0
012345
Collector to emitter saturation voltage - VCE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
10
VCE=2800V
VGE=±15V
CGE=22nF
T j= 1 2 5 °C
T0160NB45A
Issue 2
160A
100A
200
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
5
0
01234567
Collector to emitter saturation voltage - VCE(sat) (V)
0
20
40 60 80 100 120
Gate resistance - RG(on) ()
140
Data Sheet T0160NB45A Issue 2
Page 3 of 7
November, 2015



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Figure 5 – Typical turn-off delay time vs. gate
resistance
10
VCE=2800V
VGE=±15V
CGE=22nF
Tj=125°C
T0160NB45A
Issue 2
160A
100A
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 6 – Typical turn-on energy vs. collector current
1.5
RG(on)=33
CGE=22nF
VGE=±15V
Tj=125°C
T0160NB45A
Issue 2
VCE=2800V
1
5 VCE=2000V
0.5
VCE=1000V
0
0 20 40 60 80 100 120 140 160
Gate resistance - RG(off) ()
0
0 50 100 150 200
Collector current - IC (A)
Figure 7 – Typical turn-on energy vs. di/dt
4
VCE=2800V
VGE=±15V
Tj=125°C
T0160NB45A
Issue 2
3
2
IC=160A
1
IC=100A
Figure 8 – Typical turn-off energy vs. collector current
1.0
RG(off)=38
CGE=22nF
VGE=±15V
Tj=125°C
T0160NB45A
Issue 2
0.8
VCE=2800V
0.6
VCE=2000V
0.4
VCE=1000V
0.2
0 0.0
0 100 200 300 400
0
Commutation rate - di/dt (A/µs)
50 100 150
Collector current - IC (A)
200
Data Sheet T0160NB45A Issue 2
Page 4 of 7
November, 2015




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