Si7856ADP Datasheet PDF - Vishay Siliconix


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Si7856ADP
Vishay Siliconix

Part Number Si7856ADP
Description N-Channel 30-V (D-S) MOSFET
Page 8 Pages

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N-Channel 30-V (D-S) MOSFET
Si7856ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)I
0.0037 at VGS = 10 V
30
0.0048 at VGS = 4.5 V
D (A)
25
23
Qg (Typ.)
39
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7856ADP-T1
Si7856ADP-T1-E3 (Lead (Pb)-free)
Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free available
• TrenchFET® Power MOSFET
Available
• Optimized for “Low Side” Synchronous
RoHS*
Rectifier Operation
COMPLIANT
• New Low Thermal Resistance PowerPAK® Package with
Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
25
20
15
12
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
4.5 1.6
5.4 1.9
3.4 1.2
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Sym
bol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
18
50
23
65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
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Si7856ADP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on) V
DS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 19 A
Forward Transconductancea
gfs VDS = 15 V, ID = 25 A
Diode Forward Voltagea
VSD IS = 2.9 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 25 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1.0
30
Typ.
Max.
3.0
± 100
1
5
0.0029
0.0036
95
0.7
0.0037
0.0048
1.1
Unit
V
nA
µA
A
Ω
S
V
39 55
13.5
11.5
0.5 1.0 1.5
21 35
15 25
100 150
30 45
50 80
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 10 thru 4 V
50
60
50
40 40
30 30
20
3V
10
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 73157
S-80438-Rev. C, 03-Mar-08



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.0075
8000
Si7856ADP
Vishay Siliconix
0.0060
0.0045
0.0030
VGS = 4.5 V
VGS = 10 V
6400
4800
3200
Ciss
0.0015
0.0000
0
102 03 04 05
ID - Drain Current (A)
On-Resistance vs. Drain Current
6
5
VDS = 15 V
ID = 25 A
4
0
3
2
1
0
0
50
10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
60
1600
Crss
Coss
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 20 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.025
TJ = 150 °C
10
TJ = 25 °C
0.020
0.015
0.010
0.005
ID = 25 A
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
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Si7856ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6 200
0.4 ID = 250 µA
0.2
0.0
160
120
- 0.2
- 0.4
- 0.6
80
40
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
10
1 ms
10 ms
2
1
Duty Cycle = 0.5
1
0.1 TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area Junction-to-Case
10
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
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4
10- 3
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Document Number: 73157
S-80438-Rev. C, 03-Mar-08




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