Si4425DDY Datasheet PDF - Vishay

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Si4425DDY
Vishay

Part Number Si4425DDY
Description P-Channel 30-V (D-S) MOSFET
Page 10 Pages


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P-Channel 30-V (D-S) MOSFET
Si4425DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0098 at VGS = 10 V
- 30
0.0165 at VGS = 4.5 V
ID (A)a
- 19.7
- 15.2
Qg (Typ.)
27 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
Top View
Ordering Information: Si4425DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 30
± 20
- 19.7
- 15.7
- 13b, c
- 10.4b, c
- 50
- 4.7
- 2.1b, c
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
35
18
Maximum
50
22
Unit
°C/W
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
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Si4425DDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = - 250 µA
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = - 10 V, ID = - 13 A
VGS = - 4.5 V, ID = - 10 A
VDS = - 15 V, ID = - 13 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 15 V, VGS = - 10 V, ID = - 13 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A
f = 1 MHz
VDD = - 15 V, RL = 1.5 Ω
ID - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 15 V, RL = 1.5 Ω
ID - 10 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 30
- 1.2
- 30
0.4
Typ. Max. Unit
- 20
4.9
0.0081
0.0137
40
- 2.5
± 100
-1
-5
0.0098
0.0165
V
mV/°C
V
nA
µA
A
Ω
S
2610
460
395
53
27
8
13
2.1
52
41
36
15
12
9
42
9
80
41
4.2
78
62
54
25
20
15
63
15
- 0.8
20
10
10
9
- 4.7
- 50
- 1.2
30
20
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64732
S09-0314-Rev. A, 02-Mar-09



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
VGS = 10 V thru 4 V
2.0
40
1.5
30
1.0
20
0.5
10 VGS = 3 V
0
0.0
0.020
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
0.0
0
4000
Si4425DDY
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
123
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4
0.015
VGS = 4.5 V
3000
Ciss
0.010
VGS = 10 V
0.005
0.000
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 13 A
8
50
6
VDS = 15 V
VDS = 24 V
4
2
0
0 10 20 30 40 50 60
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09
2000
1000
Crss
Coss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 13 A
1.5 VGS = 10 V
30
1.2
VGS = 4.5 V
0.9
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4425DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.04
10 TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.2
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
1.9
1.6
ID = 250 µA
1.3
80
60
40
20
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µA
10
1
0.1 TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 64732
S09-0314-Rev. A, 02-Mar-09



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