SVF10N65F Datasheet PDF - Silan Microelectronics


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SVF10N65F
Silan Microelectronics

Part Number SVF10N65F
Description 650V N-CHANNEL MOSFET
Page 8 Pages

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SVF10N65T/F_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N65T/F is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N65T
SVF10N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVF10N65T
SVF10N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
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SVF10N65T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC = 25°C
TC = 100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
SVF10N65T
SVF10N65F
650
±30
10
5.5
40
156 50
1.25 0.4
608
-55+150
-55+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVF10N65T
SVF10N65F
0.8 2.5
62.5 120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=5.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=325V, ID=10A,
RG=25Ω
(Note 2,3)
VDS=520V,ID=10A,
VGS=10V
(Note 2,3)
Min.
650
--
--
2.0
Typ.
--
--
--
--
Max.
--
10
±100
4.0
Unit
V
µA
nA
V
-- 0.8 1.0 Ω
-- 1143.2 --
-- 128.8 --
-- 3.5 --
-- 40.00 --
-- 73.67 --
-- 52.13 --
-- 34.80 --
-- 20.00 --
-- 7.47 --
-- 6.48 --
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
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SVF10N65T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse p-n
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=10A,VGS=0V
Trr IS=10A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=5.82A, VDD=150V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width 300μs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
450
4.2
Max.
10
40
1.3
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 3 of 8



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TYPICAL CHARACTERISTICS
SVF10N65T/F_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 4 of 8




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