SUD50N025-25P Datasheet PDF - Vishay Siliconix


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SUD50N025-25P
Vishay Siliconix

Part Number SUD50N025-25P
Description N-Channel MOSFET
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SPICE Device Model SUD50N025-05Pwww.DataSheet4U.com
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Model Subcircuit)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73393
S-50907Rev. A, 16-May-05
www.vishay.com
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SPICE Device Model SUD50N025-05P
Vishay Siliconix
www.DataSheet4U.com
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS(th)
ID(on)
rDS(on)
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15 A
IS = 30 A, VGS = 0 V
VDS = 12 V, VGS = 0 V, f = 1 MHz
VDS = 12 V, VGS = 4.5 V, ID = 50 A
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
1.8
1013
0.0041
0.0063
0.90
0.0042
0.0062
0.90
V
A
V
3956
820
338
30
10.5
10.5
3600
790
430
30
10.5
10.5
pF
nC
www.vishay.com
2
Document Number: 73393
S-50907Rev. A, 16-May-05



No Preview Available !

SPICE Device Model SUD50N025-05Pwww.DataSheet4U.com
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 73393
S-50907Rev. A, 16-May-05
www.vishay.com
3




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