SUD50N02-12P Datasheet PDF - Vishay Siliconix


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SUD50N02-12P
Vishay Siliconix

Part Number SUD50N02-12P
Description N-Channel MOSFET
Page 4 Pages

SUD50N02-12P datasheet pdf
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SUD50N02-12Pwww.DataSheet4U.com
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.012 @ VGS = 10 V
0.026 @ VGS = 4.5 V
TO-252
ID (A)a
40c
27c
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
- Desktop
D - Server
GDS
Top View
Order Number:
SUD50N02-12P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC= 100_C
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
PD
TJ, Tstg
20
"20
40c
28c
90
4
33.3
6a
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
t v 10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A.
RthJA
RthJC
Document Number: 72095
S-31269—Rev. B, 16-Jun-03
Typical
20
40
3.7
Maximum
25
50
4.5
Unit
_C/W
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SUD50N02-12P
Vishay Siliconix
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
ISM
VSD
trr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
V
0.8 3.0
"100
nA
1
mA
50
50 A
0.0095 0.012
0.021
0.0143
0.026
W
10 S
1000
370
180
3.0
7.5
3.5
2.6
11
10
24
9
12
20
15
35
15
pF
W
nC
ns
100 A
1.1 1.5 V
20 40 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
90
6V
75 VGS = 10 thru 7 V
90
75
60 5 V 60
45 45
Transfer Characteristics
TC = - 55_C
25_C
125_C
30 4 V 30
15
0
0
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2
3V
2468
VDS - Drain-to-Source Voltage (V)
10
15
0
0
123456
VGS - Gate-to-Source Voltage (V)
7
Document Number: 72095
S-31269—Rev. B, 16-Jun-03



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SUD50N02-12Pwww.DataSheet4U.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
50
0.040
On-Resistance vs. Drain Current
0.035
40 TC = - 55_C
0.030
VGS = 4.5 V
30
25_C
0.025
125_C
0.020
20
0.015
VGS = 10 V
0.010
10
0.005
0
0 10 20 30 40 50
0.000
0
15 30 45 60 75
1500
ID - Drain Current (A)
Capacitance
ID - Drain Current (A)
Gate Charge
10
90
1200
Ciss
8
VDS = 10 V
ID = 50 A
900 6
600
300 Crss
Coss
4
2
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 30 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
Document Number: 72095
S-31269—Rev. B, 16-Jun-03
0
0 4 8 12 16
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
TJ = 150_C
10
TJ = 25_C
1
0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
1.5
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SUD50N02-12P
Vishay Siliconix
www.DataSheet4U.com
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
20
16
12
8
4
1000
100
10
Safe Operating Area
Limited
by rDS(on)
1
0.1 TA = 25_C
Single Pulse
10, 100 ms
1 ms
10 ms
100 ms
1s
10 s
100 s
dc
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (_C)
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1 Duty Cycle = 0.5
100
0.2
0.1
0.1 0.02
0.05
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100 1000
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Document Number: 72095
S-31269—Rev. B, 16-Jun-03




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