STT3998N Datasheet PDF - SeCoS

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STT3998N
SeCoS

Part Number STT3998N
Description Dual N-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low RDS(on) provide higher efficiency and extends battery
life.
Low thermal impedance copper leadframe TSOP-6 saves
board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
20
RDS(on) (m
58@VGS= 4.5V
82@VGS= 2.5V
ID(A)
3.7
3.1
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
GD
SS
GD
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
20
±12
3.7
2.9
8
1.05
1.15
0.7
-55 ~ 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
Notes
t 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Symbol
RJA
Typ. Max.
93 110
130 150
Unit
°C / W
Any changes of specification will not be informed individually.
Page 1 of 2



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Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.7
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS - - 1 uA VDS= 0V, VGS= 12V
Zero Gate Voltage Drain Current
On-State Drain Current a
- - 0.1
VDS= 16V, VGS= 0V
IDSS
uA
- -1
VDS= 16V, VGS= 0V, TJ= 55°C
ID(on)
30
-
-
A VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
RDS(ON)
-
-
-
-
gfs - 10
VSD - 0.8
DYNAMIC b
58
82
-
-
VGS= 4.5V, ID= 3.7A
m
VGS= 2.5V, ID= 2.7A
S VDS= 10V, ID= 6.8A
V IS= 1.05A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 7.5 -
Qgs
-
0.6
-
nC
VDS= 10V, VGS= 4.5V,
ID= 3.7A
Qgd - 1.0 -
Turn-on Delay Time
Td(on)
-
5
-
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
12
13
-
-
nS
VDD= 10V, VGS= 4.5V,
RGEN= 15, ID= 1A
Fall Time
Tf - 7
Notes
a. Pulse testPW 300 us duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
-
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2



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