STT3981 Datasheet PDF - SeCoS

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STT3981
SeCoS

Part Number STT3981
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.
FEATURES
z Low On-Resistance
z Low Gate Charge
PACKAGE DIMENSIONS
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0 0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0° 10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
TJ, TSTG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient3 (Max)
Symbol
RθJA
Ratings
-20
±8
-1.6
-1.3
-8
0.8
0.006
-55 ~ +150
Ratings
150
Unit
V
V
A
A
W
W/
Unit
/W
01-June-2005 Rev. B
Page 1 of 5



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Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Static
BVDSS -20 - - V VGS = 0, ID=250 uA
VGS(th) -0.4 - -1.1 V VDS = VGS, ID=250 uA
Gate Leakage Current
IGSS - - ±100 nA VGS = ±8 V
Drain-Source Leakage Current (Tj=25)
Drain-Source Leakage Current (Tj=70)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage2
IDSS
RDS(ON)
gfs
VSD
- - -1 uA VDS = -20 V, VGS = 0
- - -20
VDS = -16 V, VGS = 0
- 100 150
VGS = -4.5 V, ID = -1.9 A
- 160 210 mVGS = -2.5 V, ID = -1.6 A
- 260 300
VGS = -1.8 V, ID = -0.7 A
-4-
S VDS = -5V, ID = -1.9A
- -0.84 -1.1 V IS = -1.0A, VGS = 0V
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
- 6 7.5
- 0.52 -
- 1.02 -
- 50 65
- 40 60
- 168 180
- 64 75
- 450 -
Coss - 60 -
Crss - 47 -
nC ID = -1.9 A
VDS = -10 V
VGS = -4.5 V
VDS = -10 V
ID = -1 A
nS VGEN = -4.5 V
RG = 6 Ω
RL = 10 Ω
VGS = 0 V
pF VDS = -15 V
f = 1.0 MHz
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse width300us, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
01-June-2005 Rev. B
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Elektronische Bauelemente
CHARACTERISTIC CURVES
Output Characteristics
8
7 VGS = 5 thru 3 V
6
2.5 V
5
4
3 2V
2
1 1.5 V
0
012345
VDS - Drain-to-Source Voltage (V)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
On-Resistance vs. Drain Current
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
1234567
ID - Drain Current (A)
Gate Charg e
6
VDS = 10 V
ID = 1.9 A
5
4
3
2
1
0
0123456
Qg - Total Gate Charge (nC)
7
01-June-2005 Rev. B
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Transfer Characteristics
8
TC = - 55 C
7
25 C
6
125 C
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Capacitance
400
350
300
250 Ciss
200
150
100
50
0
0
Crss
4
Coss
8 12 16
VDS - Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperatur e
1.6
VGS = 4.5 V
ID = 1.9 A
1.4
1.2
1.0
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature ( C)
Page 3 of 5



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Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Source-Drain Diode Forward Voltage
10
TJ = 150 C
1
TJ = 25 C
0.1
0.00
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
1.5
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
ID = 1.9 A
0.3
0.2
0.1
0.0
0
12345
VGS - Gate-to-Source Voltage (V)
6
Threshold Voltage
0.3
0.2
0.1 ID = 250 A
0.0
- 0.1
- 0.2
- 50 -25
0 25 50 75 100 125 150
TJ - Temperature ( C)
Single Pulse Power, Junction-to-Ambient
25
20
15
10
5
0
0.001
0.01 0.1
Time (sec)
1
10
Safe Operating Area, Junction-to-Case
100
10 rDS(on) Limited
IDM
Limited
01-June-2005 Rev. B
1 1 ms
0.1
0.01
0.1
ID(on)
Limited
TC = 25 C
Single Pulse
BVDSS Limited
10 ms
100 ms
10 s, 1 s
dc
1 10
VDS - Drain-to-Source Voltage (V)
100
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