STT3962NE Datasheet PDF - SeCoS


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STT3962NE
SeCoS

Part Number STT3962NE
Description N-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente
STT3962NE
2.3A , 60V , RDS(ON) 0.153
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G1
ESD
Protection Diode
2KV
S2
G2
D1
S2
D2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
t 10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
60
±20
2.3
1.9
8
1.05
1.15
0.7
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
4-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2



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Elektronische Bauelemente
STT3962NE
2.3A , 60V , RDS(ON) 0.153
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
IGSS
1
-
- - V VDS=VGS, ID=250uA
- 100 uA VDS=0, VGS=20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
- -1
VDS=48V, VGS=0
IDSS
uA
- - 10
VDS=48V, VGS=0, TJ=55°C
ID(on)
5
-
-
A VDS =5V, VGS=10V
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage 1
RDS(ON)
gfs
VSD
--
--
- 10
- 0.8
Dynamic 2
0.153
0.185
-
-
VGS=10V, ID=2.3A
VGS=4.5V, ID=2.1A
S VDS=5V, ID=2.3A
V IS=1.05A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 3 -
VDS=15V,
Qgs - 0.6 - nC VGS=4.5V,
Qgd - 1 -
ID=2.3A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 5 -
VDD=15V,
Tr - 12 - nS VGS=4.5V,
Td(off) - 13 -
RGEN=15,
Tf - 7 -
ID=1A
Notes:
1. Pulse test: PW 300us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2




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