STT3962N Datasheet PDF - SeCoS

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STT3962N
SeCoS

Part Number STT3962N
Description N-Channel Enhancement Mode MOSFET
Page 4 Pages


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Elektronische Bauelemente
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
TSOP-6
A
E
L
654
B
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TSOP-6 surface mount package saves board space.
123
F
DG
K
C
H
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
60
RDS(on) (
0.153@VGS= 10V
0.185@VGS= 4.5V
ID(A)
2.3
2.1
G
S
G
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
D
S
D
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
IS
PD @TA=25
PD @TA=70
Tj, Tstg
Ratings
Maximum
60
±20
2.3
1.9
8
1.05
1.15
0.7
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
Notes
t 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
RJA
Maximum
100
166
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4



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Elektronische Bauelemente
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
1
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage Current
IGSS - - 100 uA VDS= 0V, VGS= 20V
Zero Gate Voltage Drain Current
On-State Drain Current a
- -1
VDS= 48V, VGS= 0V
IDSS
uA
- - 10
VDS= 48V, VGS=0 V, TJ= 55°C
ID(on)
5
-
-
A VDS = 5V, VGS= 10 V
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
RDS(ON)
-
-
- 0.153
- 0.185
gfs - 10 -
VSD - 0.80 -
DYNAMIC b
VGS= 10V, ID= 2.3A
VGS= 4.5V, ID= 2.1A
S VDS= 5V, ID= 2.3A
V IS= 1.05A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 3 -
Qgs
-
0.6
-
nC
VDS= 15V, VGS= 4.5V,
ID= 2.3A
Qgd - 1.0 -
Turn-on Delay Time
Td(on)
-
5
-
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
12
13
-
-
nS
VDD= 15V, VGS= 4.5V,
RGEN= 15, ID= 1A
Fall Time
Tf - 7
Notes
a. Pulse testPW 300 us duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
-
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4



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Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4



No Preview Available !

Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4



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