STT3930N Datasheet PDF - SeCoS


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STT3930N
SeCoS

Part Number STT3930N
Description N-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente
STT3930N
3.5A , 30V , RDS(ON) 58m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
GD
SS
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient 1
t 10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
30
±20
3.5
2.8
16
1.25
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
25-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2



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Elektronische Bauelemente
STT3930N
3.5A , 30V , RDS(ON) 58m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
IGSS
1
-
- - V VDS=VGS, ID=250uA
-
±100
nA VDS=0, VGS=±20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
- -1
VDS=24V, VGS=0
IDSS
uA
- - 25
VDS=24V, VGS=0, TJ=55°C
ID(on)
6
-
-
A VDS =5V, VGS=10V
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
-
-
- 58
VGS=10V, ID=3.5A
m
- 82
VGS=4.5V, ID=3A
gfs
- 6.9 -
S VDS=15V, ID=3.5A
Diode Forward Voltage
VSD - 0.8 -
Dynamic 2
V IS=2.3A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 2.2 -
VDS=15V,
Qgs - 0.5 - nC VGS=4.5V,
Qgd - 0.8 -
ID=3.5A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
- 16
-
VDD=25V,
Tr - 5 - nS VGEN=10V,
Td(off)
- 23
-
RL=25,
Tf - 3 -
ID=1A
Notes:
1. Pulse test: PW 300us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
25-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2




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