STL24N60M2 Datasheet PDF - STMicroelectronics


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STL24N60M2
STMicroelectronics

Part Number STL24N60M2
Description N-channel Power MOSFET
Page 15 Pages

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STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet production data
Features
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Figure 1. Internal schematic diagram
D(3)
G(1)
S(2)
AM01476v1
Order code VDS @ TJmax RDS(on) max ID
STL24N60M2
650 V
0.21 Ω 18 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL24N60M2
Table 1. Device summary
Marking
Package
24N60M2
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID024777 Rev 2
1/15
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Contents
Contents
STL24N60M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STL24N60M2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS Gate-source voltage
(1)
ID Drain current (continuous) at TC = 25 °C
(1)
ID Drain current (continuous) at TC = 100 °C
(1),(2)
IDM Drain current (pulsed)
(1)
PTOT Total dissipation at TC = 25 °C
(3)
dv/dt Peak diode recovery voltage slope
(4)
dv/dt MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area.
3. ISD 18 A, di/dt 400 A/μs, VDS(peak) < V(BR)DSS, VDD=400 V
4. VDS 480 V
± 25
18
12
72
125
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on FR-4 board of inch², 2oz Cu.
Value
1
45
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
3.5
180
Unit
V
A
A
A
W
V/ns
V
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
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Electrical characteristics
2 Electrical characteristics
STL24N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
VGS = 0, ID = 1 mA
Zero gate voltage
IDSS
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 600 V
VGS = 0,
VDS = 600 V, TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source on-
resistance
VGS = 10 V, ID = 9 A
Min. Typ. Max. Unit
600 V
1 μA
100 μA
±10 μA
2 3 4V
0.186 0.21 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 1060 - pF
- 55 - pF
2.2
- - pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
- 258 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
- 7 -Ω
Qg Total gate charge
VDD = 480 V, ID = 18 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
- 29 - nC
- 6 - nC
- 12 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15 DocID024777 Rev 2




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