STGP30NC60K Datasheet PDF - STMicroelectronics

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STGP30NC60K
STMicroelectronics

Part Number STGP30NC60K
Description short circuit rugged IGBT
Page 15 Pages


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STGB30NC60K
STGP30NC60K
30 A - 600 V - short circuit rugged IGBT
Features
Low on-voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross conduction
susceptibility)
Short circuit withstand time 10 µs
Applications
High frequency inverters
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB30NC60KT4
GB30NC60K
STGP30NC60K
GP30NC60K
Package
D²PAK
TO-220
Packaging
Tape and reel
Tube
March 2008
Rev 2
1/15
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Contents
Contents
STGB30NC60K - STGP30NC60K
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
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STGB30NC60K - STGP30NC60K
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
IC(1)
IC(1)
ICL (2)
ICP (3)
Collector-emitter voltage (VGE = 0)
Collector current (continuous) at TC = 25°C
Collector current (continuous) at TC = 100°C
Turn-off latching current
Pulsed collector current
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25°C
tscw
Short circuit withstand time, VCE = 0.5V(BR)CES
Tj = 125°C, RG = 10 Ω, VGE = 12 V
Tj Operating junction temperature
1. Calculated according to the iterative formula:
Value
600
60
26
125
125
±20
185
10
– 55 to 150
Ic(Tc)
=
---------------------------T----J--(--M-----A---X---)----–----T----c---------------------------
Rthj c × VCE(sat)(MAX) ⋅ (Tc,Ic)
Unit
V
A
A
A
A
V
W
µs
°C
2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 , VGE = 15 V
3. Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-amb Thermal resistance junction-ambient max.
Value
0.675
62.5
Unit
°C/W
°C/W
3/15
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Electrical characteristics
2 Electrical characteristics
STGB30NC60K - STGP30NC60K
(TCASE=25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage (VGE= 0)
IC= 1 mA
VCE(SAT)
Collector-emitter saturation
voltage
VGE= 15 V, IC= 20 A
VGE= 15 V, IC= 20 A,
Tc= 125°C
ICES
VGE(th)
IGES
Collector cut-off current
(VGE = 0)
Gate threshold voltage
Gate-emitter cut-off
current (VCE = 0)
VCE = 600 V
VCE = 600 V, TC= 125°C
VCE= VGE, IC= 250 µA
VGE= ±20 V
gfs (1) Forward transconductance VCE = 15 V , IC = 20 A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
600 V
2.1 2.7 V
1.9 V
150 µA
1 mA
4.5 6.5 V
±100 nA
15 S
Table 5. Dynamic
Symbol
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min. Typ. Max. Unit
VCE = 25 V, f = 1 MHz, VGE= 0
VCE = 480 V, IC = 20 A,
VGE = 15 V
(see Figure 17)
2170
230
46
96
18
46
pF
pF
pF
nC
nC
nC
4/15
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