STGB30NC60W Datasheet PDF - STMicroelectronics

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STGB30NC60W
STMicroelectronics

Part Number STGB30NC60W
Description ultra fast IGBT
Page 16 Pages


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STGB30NC60W - STGP30NC60W
STGW30NC60W
30 A - 600 V - ultra fast IGBT
Features
High frequency operation
Lower CRES / CIES ratio (no cross-conduction
susceptibility)
Applications
High frequency motor controls, inverters, ups
HF, SMPS and PFC in both hard switch and
resonant topologies
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
2
1
TO-247
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB30NC60WT4
GB30NC60W
STGP30NC60W
GP30NC60W
STGW30NC60W
GW30NC60W
Package
D²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
March 2008
Rev 8
1/16
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Contents
Contents
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES Collector-emitter voltage (VGE = 0)
IC (1) Collector current (continuous) at 25 °C
IC (1) Collector current (continuous) at 100 °C
ICL(2) Turn-off latching current
ICP (3) Pulsed collector current
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25 °C
Tj Operating junction temperature
1. Calculated according to the iterative formula:
IC(TC)
=
----------------------------------T----J---M------A----X------–----T----C-------------------------------------
RTHJ C × VCESAT(MAX)(TC, IC)
2. Vclamp = 80%(VCES), Tj =150 °C, RG=10 , VGE=15 V
3. Pulse width limited by max junction temperature allowed
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Value
600
60
30
150
150
± 20
200
– 55 to 150
Unit
V
A
A
A
A
V
W
°C
Value
TO-220
TO-247
D²PAK
Unit
0.62 °C/W
50 62.5 °C/W
3/16
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Electrical characteristics
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 1 mA
600
VCE(sat)
Collector-emitter saturation VGE=15 V, IC= 20 A
voltage
VGE=15 V, IC= 20 A,Tc= 125 °C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250 µA
3.75
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, Tc=125 °C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V
gfs (1) Forward transconductance VCE = 15 V, IC= 20 A
1. Pulse duration = 300 µs, duty cycle 1.5%
V
2.1 2.5
1.8
V
V
5.75 V
10 µA
1 mA
± 100 nA
15 S
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 25 V, f = 1 MHz,
VGE=0
VCE = 390 V, IC = 20 A,
VGE = 15 V,
(see Figure 17)
Min. Typ. Max. Unit
2080
175
52
pF
pF
pF
102 nC
17.5 nC
47 nC
4/16
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STGB30NC60W datasheet pdf
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