STF8NM60ND Datasheet PDF - STMicroelectronics


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STF8NM60ND
STMicroelectronics

Part Number STF8NM60ND
Description Power MOSFET
Page 17 Pages

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STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70
< 0.70
< 0.70
< 0.70
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
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17
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Contents
Contents
STx8NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17



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STx8NM60ND
1 Electrical
ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
TO-220 DPAK
IPAK
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
Drain current (continuous) at
ID TC = 25 °C
ID
IDM (2)
Drain current (continuous) at
TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS)
VISO from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
dv/dt (3) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 7 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
600
± 30
77
4.4
28
70
40
-55 to 150
150
Value
TO-220 DPAK
IPAK
(1)
4.4 (1)
28 (1)
25
2500
TO-220FP
V
V
A
A
A
W
V
V/ns
°C
°C
Unit
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Rthj-pcb Thermal resistance junction-pcb
Tl
Maximum lead temperature for
soldering purpose
1.79
62.5 100
50
300
5 °C/W
62.5 °C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
2.5
200
Unit
A
mJ
3/17



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Electrical characteristics
2 Electrical
characteristics
STx8NM60ND
(TCASE= 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
dv/dt(1)
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source voltage slope
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDD = 480 V, ID = 7 A,
VGS =10 V
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 3.5 A
1. Characteristics value at turn off on inductive load
600 V
45 V/ns
1 µA
100 µA
±100 nA
34 5V
0.59 0.70
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID= 5 A
VDS = 50 V, f = 1 MHz, VGS = 0
7.5
560
37
4
S
pF
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
90 pF
f = 1 MHz Gate DC Bias = 0
RG Gate input resistance
Test Signal Level = 20 mV
Open Drain
6
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 7 A
VGS = 10 V
Figure 19
22 nC
4 nC
13 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17




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