STD19NF20 Datasheet PDF - STMicroelectronics


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STD19NF20
STMicroelectronics

Part Number STD19NF20
Description N-CHANNEL POWER MOSFET
Page 27 Pages

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STB19NF20, STD19NF20,
STF19NF20, STP19NF20
N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY™
Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages
Datasheet — production data
TAB
3
1
D²PAK
7$%


DPAK
TAB
Features
Type
STB19NF20
STD19NF20
STF19NF20
STP19NF20
VDS
RDS(on)
max.
200 V
200 V
200 V
200 V
0.16
0.16
0.16
0.16
ID
15 A
15 A
15 A
15 A
PTOT
90 W
90 W
25 W
90 W
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Applications
Switching application
* 
6 
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
$0Y
Order code
STB19NF20
STD19NF20
STF19NF20
STP19NF20
Table 1. Device summary
Marking
Package
19NF20
D2PAK
19NF20
DPAK
19NF20
TO-220FP
19NF20
TO-220
Packing
Tape and reel
Tube
April 2015
This is information on a product in full production.
Doc ID 12758 Rev 6
1/27
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Contents
Contents
STB19NF20, STD19NF20, STF19NF20, STP19NF20
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 D²PAK (TO-263) type A and type B package information . . . . . . . . . . . . 10
4.2 D²PAK (TO-263) type A and type B packing information . . . . . . . . . . . . . 15
4.3 DPAK (TO-252) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.4 DPAK (TO-252) packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.5 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.6 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2/27 Doc ID 12758 Rev 6



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STB19NF20, STD19NF20, STF19NF20, STP19NF20
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, DPAK,
TO-220
TO-220FP
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM(2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT
VISO
dv/dt(3)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s;
TC = 25 °C)
Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by package.
2. Pulse width limited by safe operating area.
3. ISD 15 A, di/dt 300 A/µs, VDD = 80% V(BR)DSS.
200
± 20
15
9.45
60
90
15(1)
9.45(1)
60 (1)
25
2500
15
-55 to 150
Unit
V
V
A
A
A
W
V
V/ns
°C
Symbol
Rthj-case
Rthj-pcb
Rthj-a
Table 3. Thermal data
Parameter
D²PAK
Value
Unit
DPAK TO-220 TO-220FP
Thermal resistance junction-case
1.39
5
Thermal resistance junction-pcb 35 50
Thermal resistance junction-
ambient
°C/W
62.5
Symbol
IAR
EAS
Table 4. Avalanche data
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 12758 Rev 6
Value
15
110
Unit
A
mJ
3/27
27



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Electrical characteristics
STB19NF20, STD19NF20, STF19NF20, STP19NF20
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 5. Static
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 200 V
VGS = 0 V, VDS = 200 V,
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.5 A
Min. Typ. Max. Unit
200 V
1
µA
10
±100 nA
2 3 4V
0.11 0.16
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 8 V, ID = 7.5 A
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 160 V, ID = 15 A,
VGS = 10 V
(see Figure 17)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
12 S
800
165 pF
26
24
4.4 nC
11.6
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100 V, ID = 7.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
11.5
22
ns
19
11
4/27 Doc ID 12758 Rev 6




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