STC503F Datasheet PDF - KODENSHI KOREA

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STC503F
KODENSHI KOREA

Part Number STC503F
Description NPN Silicon Transistor
Page 5 Pages


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STC503F
NPN Silicon Transistor
Applications
Power amplifier application
High current switching application
PIN Connection
Features
Power Transistor General Purpose application
Low saturation voltage
: VCE(sat)=0.4V Typ.
High Voltage : VCEO=65V Min.
Ordering Information
Type NO.
Marking
STC503F
Absolute Maximum Ratings
Characteristic
C503
YWW
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
VCBO
VCEO
VEBO
IC
ICP*
PC
PC**
Tj
Tstg
** : When mounted on ceramic substrate(250 ㎟×0.8t)
SOT-89
Package Code
Rating
80
65
5
3
6
0.5
1
150
-55~150
SOT-89
[Ta=25]
Unit
V
V
V
A(DC)
A(Pulse)
W
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* hFE rank : 300~500 Only
Symbol
BVCEO
ICBO
IEBO
hFE *
VBE(ON)
VCE(sat)
fT
Cob
Test Condition
IC=1mA, IB=0
VCB=65V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCB=5V, IC=50mA
VCB=10V, IE=0, f=1MHz
KSD-T5B024-000
Min.
65
-
-
300
-
-
-
-
Typ.
-
-
-
-
0.7
0.4
250
15
(Ta=25°C)
Max. Unit
-V
50 μA
50 μA
500 -
1V
1V
- MHz
- pF
1
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Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC - VBE
STC503F
Fig. 3 VCE(sat) - IC
Fig. 5 IC - VCE
Fig. 4 IC - VCE
Fig. 6 hFE-IC
KSD-T5B024-000
2
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Electrical Characteristic Curves
Fig. 7 hFE-IC
Fig. 8 hFE-IC
STC503F
Fig. 9 Cob - VCB
Fig. 10 fT - IC
Fig. 11 Safe Operating Area
KSD-T5B024-000
3
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Outline Dimension(mm)
STC503F
Recommend PCB solder land [Unit: mm]
KSD-T5B024-000
4
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STC503F datasheet pdf
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