SST11CP15E Datasheet PDF - Microchip

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SST11CP15E
Microchip

Part Number SST11CP15E
Description 4.9-5.9 GHz High-Linearity Power Amplifier
Page 17 Pages


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4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
– VCC = 3.0–5.0V
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V VCC
- Up to 18 dBm at 3.3V VCC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V VCC
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC
• Low idle current
– ~140 mA ICQ, 3.3 V VCC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• All lead-free devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13



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4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Product Description
Data Sheet
The SST11CP15E is a high-linearity power amplifier designed for 802.11 a/n/ac embedded applica-
tions. It has low power consumption and is based on the highly-reliable InGaP/GaAs HBT technology.
The SST11CP15E offers a wide operating-voltage range from VCC 3.3V to 5.0V. It can be easily config-
ured for high-linearity, high-efficiency applications while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.9 GHz).
The SST11CP15E has excellent linearity, typically ~3% EVM at 19.5 dBm output power for 54 Mbps
802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 24 dBm. The power amplifier
also provides 16 dBm at 1.8% EVM with 802.11ac, 351 Mbps modulation. SST11CP15E includes a
wide dynamic-range, linear power detector that is insensitive to temperature and Voltage Standing
Wave Ratio (VSWR).
The power amplifier IC also features easy board-level operation along with high-speed power-up/down
control. Low reference current (typically 4 mA) makes the SST11CP15E controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST11CP15E ideal for the final stage power amplification in battery-powered 802.11a/n/ac
WLAN transmitter applications.
The SST11CP15E is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure
2 for pin assignments and Table 1 for pin descriptions.
©2013 Silicon Storage Technology, Inc.
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4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Functional Blocks
Data Sheet
12 11 10
RFIN 1
Input
Match
VCCb 2
VREF1 3
Bias
Control
9 GND
8 RFOUT
Power
Detection
7 NC
4 56
Figure 1: Functional Block Diagram
75025 B1.0
©2013 Silicon Storage Technology, Inc.
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Pin Assignments
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
12 11 10
RFIN 1
VCCb 2
VREF1 3
Top View
(Contacts facing down)
RF and DC GND
0
9 GND
8 RFOUT
7 NC
4 56
Figure 2: Pin Assignments for 12-contact UQFN
75025 P1.0
©2013 Silicon Storage Technology, Inc.
4
DS70005025C
05/13



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