SST11CP15 Datasheet PDF - Silicon Storage Technology

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SST11CP15
Silicon Storage Technology

Part Number SST11CP15
Description 4.9-5.8 GHz High-Linearity Power Amplifier
Page 11 Pages


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4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
FEATURES:
• Small Package Size
• High Linear Output Power:
– 802.11a OFDM Spectrum mask compliance up
to 23 dBm
– Added EVM~2.5% up to 18 dBm, typically,
across 5.1-5.8 GHz for 54 Mbps 802.11a signal
• High Power-added Efficiency/Low Operating
Current for 54 Mbps 802.11a Applications
– ~11% @ POUT = 19 dBm for 54 Mbps
• Gain:
– Typically 26 dB gain across broadband
4.9-5.8 GHz
• Low Idle Current
– ~120 mA ICQ
• High Speed Power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low Shut-down Current (<1 µA)
• On-chip Power Detection
• 20 dB Dynamic Range On-chip Power Detection
• 50Ω On-chip Input Matching and Simple Output
Matching
• Packages Available
– 12-contact UQFN (2mm x 2mm x 0.6mm max
thickness)
APPLICATIONS:
• WLAN (IEEE 802.11a/n)
• Japan WLAN
• HyperLAN2
• Multimedia
Data Sheet
PRODUCT DESCRIPTION
The SST11CP15 is a high-linearity power amplifier that has
low power consumption and is based on the highly-reliable
InGaP/GaAs HBT technology.
The SST11CP15 can be easily configured for high-linearity,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz).
The SST11CP15 has excellent linearity, typically ~2.5%
added EVM at 18 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spec-
trum mask at 23 dBm. SST11CP15 also has wide-range,
single-ended power detectors which lower users’ cost on
power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Low
reference current (total IREF <5 mA) makes the
SST11CP15 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11CP15 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11CP15 is offered in 12-contact UQFN package
with 0.6 mm maximum thickness. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
S71428-01-000
01/11
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.



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Data Sheet
FUNCTIONAL BLOCKS
4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
12 11 10
RFIN 1
Input
Match
VCCb 2
VREF1 3
Bias
Control
9 GND
8 RFOUT
Power
Detection
7 NC
4 56
FIGURE 1: Functional Block Diagram
1428 B1.0
©2011 Silicon Storage Technology, Inc.
2
S71428-01-000
01/11



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4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
PIN ASSIGNMENTS
Data Sheet
12 11 10
RFIN 1
VCCb 2
VREF1 3
Top View
(Contacts facing down)
RF and DC GND
0
9 GND
8 RFOUT
7 NC
4 56
FIGURE 2: Pin Assignments for 12-contact UQFN
1428 P1.0
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
GND
Pin No.
0
Pin Name
Ground
RFIN
VCCb
VREF1
VREF2
VREF3
DET
NC
RFOUT
GND
VCC3
VCC2
VCC1
1
2
3
4
5
6
7
8
9
10
11
12
1. I=Input, O=Output
Power Supply
No Connection
Ground
Power Supply
Power Supply
Power Supply
©2011 Silicon Storage Technology, Inc.
Type1
I
PWR
PWR
PWR
PWR
O
O
PWR
PWR
PWR
Function
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
RF input, DC decoupled
Supply voltage for bias circuit
Current Control
Current Control
Current Control
On-chip power detector
Unconnected pin
RF Output
Ground (NC is acceptable)
Power supply, 3rd stage
Power supply, 2nd stage
Power supply, 1st stage
T1.1 1428
S71428-01-000
01/11
3



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4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm
Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
OPERATING RANGE
Range
Industrial
Ambient Temp
-10°C to +85°C
VCC
3.3V
TABLE 2: DC Electrical Characteristics
Symbol
VCC
ICC
ICQ
IOFF
VREG
Parameter
Supply Voltage at pins 2, 10, 11, 12
Supply Current @ POUT = 18 dBm at VCC = 3.3V
VCC quiescent current
Shut down current
Reference Voltage for recommended application
Min. Typ Max. Unit Notes
2.7 3.3 4.2 V
210 mA
120 mA
<1.0
µA
2.85 V
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
FL-U
Linearity
G
Det
2f, 3f, 4f, 5f
Parameter
Frequency range
Output power with 2.5% EVM at
54 Mbps OFDM signal when operating at 3.3V VCC
Output power level with 802.11a mask compliance
across 4.9-5.8 GHz
Linear gain across 4.9~5.8GHz
Power detector output voltage range
Harmonics at 22 dBm, without trapping capacitors
Min Typ Max
4.9 5.8
18 20
23
26
0.3 1.7
-40
T2.0 1428
Unit
GHz
dBm
dBm
dB
V
dBc
T3.1 1428
©2011 Silicon Storage Technology, Inc.
4
S71428-01-000
01/11



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