SSF2315 Datasheet PDF - Silikron Semiconductor


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SSF2315
Silikron Semiconductor

Part Number SSF2315
Description MOSFET
Page 6 Pages

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Main Product Characteristics:
VDSS
-20V
RDS(on) 95m(typ.)
ID -3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF2315
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-3
-2.4
-15
1.4
0.011
-20
± 12
-55 to +150
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s)
Typ.
80
Max.
100
Units
A
W
W/°C
V
V
°C
Units
/W
©Silikron Semiconductor CO.,LTD.
2012.11.29
www.silikron.com
Version : 1.0P
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Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
-20
-0.5
Typ.
95
128
8.5
1.2
2.1
7.2
36
53
56
560
80
70
Max.
130
160
-1.0
-1
100
-100
Units
V
m
V
μA
nA
nC
ns
pF
SSF2315
Conditions
VGS = 0V, ID = -250μA
VGS=-4.5V,ID = -2.8A
VGS=-2.5V,ID = -2A
VDS = VGS, ID = -250μA
VDS = -20V,VGS = 0V
VGS =12V
VGS = -12V
ID = -3A,
VDS= -10V,
VGS = -4.5V
VGS=-4.5V, VDS=-10V,
ID=-3A ,RGEN=3
VGS = 0V
VDS = -10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
-3
— — -15
— — -1.2
— 37 —
— 27 —
Units
A
A
V
ns
nC
Conditions
MOSFET symbol D
showing the
G
integral reverse
p-n junction diode.
S
IS=-1A, VGS=0V
TJ = 25°C, IF =-4A,
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2012.11.29
www.silikron.com
Version: 1.0P
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Test circuits and Waveforms
EAS test circuit:
SSF2315
Gate charge test circuit:
Switching time test circuit:
Switch Waveforms:
Notes:
The maximum current rating is limited by bond-wires.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2012.11.29
www.silikron.com
Version: 1.0P
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Mechanical Data
SOT23 PACKAGE OUTLINE DIMENSION
SSF2315
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimension In Millimeters
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00 80
Dimension In Inches
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
00 80
©Silikron Semiconductor CO., LTD.
2012.11.29
www.silikron.com
Version: 1.0P
page 4 of 6




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