SSF2307B Datasheet PDF - Silikron Semiconductor


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SSF2307B
Silikron Semiconductor

Part Number SSF2307B
Description MOSFET
Page 7 Pages

SSF2307B datasheet pdf
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SSF2307B
DESCRIPTION
The SSF2307B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
D
G
GENERAL FEATURES
VDS = -20V,ID = -3A
RDS(ON) < 115m@ VGS=-2.5V
RDS(ON) < 90m@ VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
S
Schematic diagram
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S07
SSF2307B
SOT23
Ø180mm
SOT23 top view
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-3
-1.8
-10
1.25
-55 To 150
Unit
V
V
A
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS VDS=-20V,VGS=0V
IGSS VGS=±12V,VDS=0V
Min Typ Max Unit
-20 V
-1 μA
±100
nA
©Silikron Semiconductor CO.,LTD.
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SSF2307B
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-3A
VDS=-10V,VGS=0V,
F=1.0MHz
-0.5
65
90
7
-1
90
115
1160
210
125
VDD=-10V,ID=-3A
VGS=-4.5V,RGEN=3
VDS=-10V,ID=-3A,VGS=-4.5V
13.6 27.2
8.6 17.2
73.6 147.2
34.6 69.2
9.6 12.7
1.1
2.6
VGS=0V,IS=-1A
-1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
©Silikron Semiconductor CO.,LTD.
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SSF2307B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
90%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
-ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
©Silikron Semiconductor CO.,LTD.
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SSF2307B
-Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
-Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
-Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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