SP8M6 Datasheet PDF - ROHM


www.Datasheet-PDF.com

SP8M6
ROHM

Part Number SP8M6
Description Switching Transistors
Page 6 Pages

SP8M6 datasheet pdf
View PDF for PC
SP8M6 pdf
View PDF for Mobile


No Preview Available !

Transistors
Switching
SP8M6
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
SP8M6
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
0.4±0.1
1.27 0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 30
20 20
±5.0 ±3.5
±20 ±14
1.6 1.6
20 14
2
150
55 to +150
Unit
V
V
A
A 1
A
A 1
W 2
°C
°C
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/5



No Preview Available !

Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
30
1.0
3.0
Typ.
36
52
58
230
80
50
6
8
22
5
3.9
1.1
1.4
Max.
10
1
2.5
51
73
82
5.5
Unit Conditions
µA VGS=20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=5.0A, VGS=10V
mID=5.0A, VGS=4.5V
ID=5.0A, VGS=4V
S ID=5.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL=6.0
ns RG=10
nC VDD 15V
nC VGS=5V
nC ID=5.0A
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD − − 1.2 V IS=6.4A, VGS=0V
SP8M6
Rev.A
2/5



No Preview Available !

Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − −10 µA VGS= −20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
65 90
ID= −3.5A, VGS= −10V
100 140 mID= −1.75A, VGS= −4.5V
120 165
ID= −1.75A, VGS= −4.0V
Forward transfer admittance Yfs 1.8 − − S ID= −1.75A, VDS= −10V
Input capacitance
Ciss
490
pF VDS= −10V
Output capacitance
Coss 110 pF VGS=0V
Reverse transfer capacitance Crss
75 pF f=1MHz
Turn-on delay time
td (on) 10 ns ID= −1.75A, VDD 15V
Rise time
tr 15 ns VGS= −10V
Turn-off delay time
td (off) 35 ns RL=8.6
Fall time
tf 10 ns RG=10
Total gate charge
Qg 5.5 nC VDD 15V
Gate-source charge
Qgs 1.5 nC VGS= −5V
Gate-drain charge
Qgd 2.0 nC ID= −3.5A
Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.0A, VGS=0V
SP8M6
Rev.A
3/5



No Preview Available !

Transistors
N-ch
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
Coss
Crss
10
0.01 0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000 tf
100 td (off)
Ta=25°C
VDD=15V
VGS=10V
RG=10
Pulsed
10 tr
td (on)
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
SP8M6
10
Ta=25°C
9 VDD=15V
8
ID=5A
RG=10
7 Pulsed
6
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
300
Ta=25°C
Pulsed
250
200
ID=5A
ID=2.5A
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
VGS=0V
Pulsed
0.1
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=10V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4V
Pulsed
10 10 10
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A
4/5




SP8M6 datasheet pdf
Download PDF
SP8M6 pdf
View PDF for Mobile


Similiar Datasheets : SP80001 SP8005 SP8006 SP8007 SP8008 SP8009 SP8009E SP8009EL SP800L SP800M SP8010E SP8013 SP8024 SP8025 SP8026 SP8027 SP802L SP802M SP802R SP802S SP802T SP8034A SP8036 SP8040 SP8042 SP8043 SP804R SP804S SP804T SP8050A

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact