SP8M4FRA Datasheet PDF - ROHM


www.Datasheet-PDF.com

SP8M4FRA
ROHM

Part Number SP8M4FRA
Description 30V Nch+Pch Power MOSFET
Page 23 Pages

SP8M4FRA datasheet pdf
View PDF for PC
SP8M4FRA pdf
View PDF for Mobile


No Preview Available !

SP8M4FRA
  30V Nch+Pch Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
18mΩ 28mΩ
±9.0A ±7.0A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) AEC-Q101 Qualified
lOutline
SOP8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
SP8M4
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS
30 -30
V
ID
±9.0 ±7.0
A
IDP*1
±36 ±28
A
VGSS
±20 ±20
V
PD*2 2.0
W
PD*3 1.4
Tj 150
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/19
20161019 - Rev.001    



No Preview Available !

SP8M4FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
 ΔV(BR)DSS  Tr1
   ΔTj     Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = -1mA
ID = 1mA, referenced to 25
ID = -1mA, referenced to 25
Zero gate voltage
drain current
IDSS Tr1 VDS = 30V, VGS = 0V
Tr2 VDS = -30V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±20V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
 ΔVGS(th)   Tr1
   ΔTj     Tr2
VDS = 10V, ID = 1mA
VDS = -10V, ID = -1mA
ID = 1mA, referenced to 25
ID = -1mA, referenced to 25
VGS = 10V, ID = 9A
Tr1 VGS = 4.5V, ID = 9A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 9A
VGS = -10V, ID = -7A
Tr2 VGS = -4.5V, ID = -3.5A
VGS = -4.0V, ID = -3.5A
Gate resistance
Tr1
RG
f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 9A
Tr2 VDS = -10V, ID = -3.5A
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
-30 - -
- 29.0 -
mV/
- -20.7 -
- -1
μA
- - -1
- - ±10
μA
- - ±10
1.0 - 2.5
V
-1.0 - -2.5
- -1.6 -
mV/
- 3.1 -
- 12 18
- 16 24
- 17 25
- 20 28
- 25 35
- 30 42
- 2.9 -
- 3.7 -
Ω
7.0 - -
S
6.0 - -
                                                                                               
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/19
20161019 - Rev.001



No Preview Available !

SP8M4FRA
          
lElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = 10V
f = 1MHz
VDD 15V, VGS = 10V
ID = 4.5A
RL = 3.33Ω
RG = 10Ω
<Tr2>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = -10V
f = 1MHz
VDD -15V, VGS = -10V
ID = -3.5A
RL = 4.29Ω
RG = 10Ω
                Datasheet
Values
Min. Typ. Max.
- 1190 -
- 340 -
- 190 -
- 10 -
- 15 -
- 55 -
- 22 -
Unit
pF
ns
Values
Min. Typ. Max.
- 2600 -
- 450 -
- 350 -
- 20 -
- 50 -
- 110 -
- 70 -
Unit
pF
ns
                                                                                               
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/19
20161019 - Rev.001



No Preview Available !

SP8M4FRA
          
lGate charge characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*4
Qgs*4
Qgd*4
VDD 15V, ID = 9A
VGS = 5V
                Datasheet
Values
Min. Typ. Max.
- 15 -
- 3.0 -
- 6.1 -
Unit
nC
<Tr2>
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Conditions
Qg*4
Qgs*4
Qgd*4
VDD -15V, ID = -7A
VGS = -5V
Values
Min. Typ. Max.
- 25 -
- 5.5 -
- 10 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
IS
ISP*1
VSD*4
Ta = 25
VGS = 0V, IS = 6.4A
- - 1.6
- - 36
- - 1.2
Unit
A
V
<Tr2>
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
Conditions
IS
ISP*1
VSD*4
Ta = 25
VGS = 0V, IS = -1.6A
Values
Min. Typ. Max.
- - -1.6
- - -28
- - -1.2
Unit
A
V
                                                   
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/19
                                          
20161019 - Rev.001




SP8M4FRA datasheet pdf
Download PDF
SP8M4FRA pdf
View PDF for Mobile


Similiar Datasheets : SP8M4FRA

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact