SP8K24FRA Datasheet PDF - ROHM


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SP8K24FRA
ROHM

Part Number SP8K24FRA
Description 4V Drive Nch+Nch MOSFET
Page 8 Pages

SP8K24FRA datasheet pdf
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Transistor
4V Drive Nch+Nch MOSFET
SP8K244FRA
SP8SKP284KF2R4A
AEC-Q101 Qualified
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
zApplications
Power switching , DC / DC converter , Inverter
zDimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
SPSP8K8K242F4RA
Taping
TB
2500
zEquivalent circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW 10µs、Duty cycle 1%
*2 Mounted on a ceramic board
Symbol Limits
Unit
VDSS
45
V
VGSS
±20
V
ID ±6.0
A
IDP *1
±24
A
IS 1
A
ISP *1
24
A
PD *2
2
1.4
W / TOTAL
W / ELEMENT
Tch 150
Tstg -55 to +150
oC
oC
Rev.B
1/4



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Transistor
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
18 25 mID= 6.0A, VGS= 10V
24 34 mID= 6.0A, VGS= 4.5V
26 37 mID= 6.0A, VGS= 4.0V
Forward transfer admittance Yfs 6.0 − − S VDS= 10V, ID= 6.0A
Input capacitance
Ciss
1400
pF VDS= 10V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
175
19
30
72
27
15.4 21.6
3.7
6.5
pF f=1MHz
ns VDD 25V
ns
ns
ID= 3.0A
VGS= 10V
RL= 8
ns RG=10
nC VDD 25V, VGS= 5V
nC ID= 6.0A
nC RL= 4Ω, RG= 10
Pulsed
SP8SKP284KF2R4A
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
* pulsed
Symbol
VSD *
Min.
Typ.
Max.
1.2
Unit Condition
V IS=6.0A/VGS=0V
Rev.B
2/4



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Transistor
zElectrical characteristic curves
SP8SKP284KF2R4A
10
VDS=10V
pulsed
Ta=125oC
1    75oC
   25oC
  -25oC
0.1
1000
VGS=10V
pulsed
100
Ta=125oC
75oC
25oC
-25oC
10
1000
VGS=4.5V
pulsed
100
Ta=125oC
75oC
25oC
-25oC
10
0.01
1.0
1.5 2.0 2.5 3.0
Gate-Source Voltage : VGS [V]
3.5
Fig.1 Typical Transfer Characteristics
1
0.01
0.1 1
Drain Current : ID [A]
10
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
1
0.01
0.1 1
Drain Current : ID [A]
10
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
1000
VGS=4V
pulsed
100
Ta=125oC
75oC
25oC
-25oC
10
1
0.01
0.1 1
Drain Current : ID [A]
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
200
150
Ta=25oC
pulsed
100
50 ID=6.0A
ID=3.0A
0
0 5 10
Gate-Source Voltage : VGS [V]
15
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125oC
1 75oC
25oC
-25oC
0.1
VGS=0V
pulsed
0.01
0.0
0.5 1.0
Source-Drain Voltage : VSD [V]
Fig.6 Source-Current vs.
Source-Drain Voltage
1.5
10000
10000
1000
Ciss
Coss
100
Ta=25oC
f=1MHz
VGS=0V
10
Crss
0.1 1 10 100
Drain-Source Voltage : VDS [V]
1000
100
10
td(off)
td(on)
tr
1
0.01
tf
0.1 1
Drain Current : ID [A]
Ta=25oC
VDD=25V
VGS=10V
RG=10
Pulsed
10
Fig.7 Typical capacitance vs.
Source-Drain Voltage
Fig.8 Switching Characteristics
10
Ta=25oC
8
VDD=25V
ID=6.0A
RG=10
6 Pulsed
4
2
0
0 10 20 30
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
Rev.B
3/4



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Transistor
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.10 Switching Time Test Circuit
VGS
IG (Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.12 Gate Charge Test Circuit
SP8SKP284KF2R4A
Pulse Width
50%
VGS 10%
VDS 10%
90%
50%
10%
td(on)
ton
90%
tr
td(off)
90%
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.13 Gate Charge Waveform
Rev.B
4/4




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