SP8J4 Datasheet PDF - ROHM


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SP8J4
ROHM

Part Number SP8J4
Description Switching Transistors
Page 5 Pages

SP8J4 datasheet pdf
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Transistors
Switching (30V, 2.0A)
SP8J4
SP8J4
zFeatures
1) Low On-resistance. (270mat 4.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive. (4.5V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
3.9
6.0
0.4Min.
Each lead has same dimensions
zStructure
Silicon P-channel
MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SP8J4
Taping
TB
2500
zEquivalent circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
±20
±2.0
±8.0
1.6
8.0
2.0
150
55 to +150
Unit
V
V
A
A 1
A
A 1
W 2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
170 235 mID= −2.0A, VGS= −10V
270 375 mID= −1.0A, VGS= −4.5V
320 440 mID= −1.0A, VGS= −4.0V
Forward transfer admittance Yfs 1.0 − − S VDS= −10V, ID= −1.0A
Input capacitance
Ciss
190
pF VDS= −10V
Output capacitance
Coss 45 pF VGS=0V
Reverse transfer capacitance Crss
30 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on)
7
ns ID= −1.0A
tr 10 ns VDD 15V
VGS= −10V
td (off) 25 ns RL=15
tf 4.5 ns RGS=10
Total gate charge
Qg 2.4 nC VDD 15V
Gate-source charge
Qgs 1.0 nC VGS= −5V
Gate-drain charge
Qgd 0.8 nC ID= −2.0A
Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD
− −1.2 V IS= −1.6A, VGS=0V
SP8J4
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Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1 Ta= −25°C
0.01
10000
VGS= −4V
1000 VGS= −4.5V
VGS= −10V
100
SP8J4
Ta=25°C
Pulsed
10000
Ta=125°C
1000 Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −10V
Pulsed
0.001
1.5 2.0 2.5 3.0 3.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.1 1
10
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
10000
Ta=125°C
Ta=75°C
1000 Ta=25°C
Ta= −25°C
100
VGS= −4.5V
Pulsed
10000
Ta=125°C
Ta=75°C
1000
Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.1 1
10
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
1000
100
10
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
1000
tf
100
td (off)
Ta=25°C
VDD= −15V
VGS= −10V
RG=10
Pulsed
10 td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7 VDD= −15V
ID= −2.0A
6 RG=10
Pulsed
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
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Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.10 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.12 Gate Charge Test Circuit
SP8J4
VGS 10%
90%
90%
90%
VDS
td(on)
10%
tr
ton
td(off)
10%
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.13 Gate Charge Waveform
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