SP8J3 Datasheet PDF - ROHM


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SP8J3
ROHM

Part Number SP8J3
Description 4V Drive Pch+Pch MOS FET
Page 5 Pages

SP8J3 datasheet pdf
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Transistors
4V Drive Pch+Pch MOS FET
SP8J3
SP8J3
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (100mat 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
SP8J3
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
2 2
1 1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Limits
30
±20
±3.5
±14
1.6
14
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/4



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Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
(on)
65 90 mID= −3.5A, VGS= −10V
100 140 mID= −1.75A, VGS= −4.5V
120 165 mID= −1.75A, VGS= −4.0V
Forward transfer admittance
Yfs 1.8
S VDS= −10V, ID= −1.75A
Input capacitance
Ciss
490
pF VDS= −10V
Output capacitance
Coss 110 pF VGS=0V
Reverse transfer capacitance Crss
75 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 10 ns ID= −1.75A
tr 15 ns VDD 15V
td (off)
35
VGS= −10V
ns RL=8.6
tf 10 ns RG=10
Total gate charge
Qg 5.5 nC VDD 15V
Gate-source charge
Qgs 1.5 nC VGS= −5V
Gate-drain charge
Qgd 2.0 nC ID= −3.5A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8J3
Rev.A
2/4



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Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
1000
100
VGS= −4V
VGS= −4.5V
VGS= −10V
10
SP8J3
Ta=25°C
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −10V
Pulsed
0.001
0.5 1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
1
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4.5V
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4V
Pulsed
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1 1
10
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
10000
1000
100
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
10
0.01 0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
1000
100
td (off)
tf
Ta=25°C
VDD= −15V
VGS= −10V
RG=10
Pulsed
td (on)
10
tr
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7 VDD= −15V
ID= −3.5A
6 RG=10
Pulsed
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
Rev.A
3/4



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Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.10 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.12 Gate Charge Test Circuit
SP8J3
VGS 10%
90%
90%
90%
VDS
td(on)
10%
tr
ton
td(off)
10%
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.13 Gate Charge Waveform
Rev.A
4/4




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