SMM4F28A Datasheet PDF - STMicroelectronics


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SMM4F28A
STMicroelectronics

Part Number SMM4F28A
Description High junction temperature Transil
Page 10 Pages

SMM4F28A datasheet pdf
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SMM4F
High junction temperature Transil™
Features
Typical peak pulse power:
www.DataSheet4U.com– 400 W (10/1000 µs)
– 2.4 kW (8/20 µs)
Stand off voltage range: from 5 V to 33 V
Unidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating Tj max: 175 °C
JEDEC registered package outline
RoHS package
Halogen free molding compound
Complies with the following standards
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3
– 25 kV (human body model)
A
K
STmite flat
(DO222-AA)
Description
The SMM4F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 400 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provide a better
safety margin to protect sensitive circuits with
extended life time expectancy.
Packaged in STmite flat, this minimizes PCB
space consumption (footprint in accordance with
IPC 7531 standard).
December 2007
TM: Transil is a trademark of STMicroelectronics
Rev 2
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Characteristics
1 Characteristics
SMM4F
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Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
Value
Unit
VPP Peak pulse voltage (IEC 61000-4-2 contact discharge)
PPP Peak pulse power dissipation (1)
Tj initial = Tamb
P Power dissipation on infinite heatsink
Tamb = 125 °C
IFSM
Non repetitive surge peak forward current tp = 10 ms
for unidirectional types
Tj initial = Tamb
Tstg Storage temperature range
Tj Operating junction temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
30
400
2.5
30
-65 to +175
-55 to +175
260
kV
W
W
A
°C
°C
°C
Table 2. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-l)
Rth(j-a)
Junction to leads
Junction to ambient on PCB with recommended pad layout
20
250
°C/W
Table 3.
Symbol
Electrical characteristics - parameter definitions (Tamb = 25 °C)
Parameter
I
VRM Stand-off voltage
VBR Breakdown voltage
IR Breakdown current
VCL Clamping voltage
IRM Leakage current @ VRM
IPP Peak pulse current
αT Voltage temperature coefficient
IF
VCLVBR VRM
VF
IRM
IR
V
VF Forward voltage drop
RD Dynamic resistance
IPP
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SMM4F
Characteristics
Table 4.
Electrical characteristics - parameter values (Tamb = 25 °C)
IRM max@VRM
VBR @IR(1)
VCL @IPP
RD(2)
VCL @IPP RD(2)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
αT(3)
Type
25 °C 85 °C
min typ max
max
max
max
µA V
V mA V A Ω V A Ω 10-4/°C
SMM4F5.0A
10 50 5.0 6.46 6.80 7.14 10 9.2 43.5 0.047 13.4 174 0.04 5.7
SMM4F6.0A
10 50 6.0 6.65 7.00 7.35 10 10.3 38.8 0.076 13.7 170 0.04 5.9
SMM4F6.5A
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SMM4F8.5A
10 50 6.5 7.13 7.50 7.88 10 11.2 37.5 0.093 14.5 160 0.04 6.1
10 50 8.5 9.5 10.0 10.5 1 14.4 27.7 0.141 19.5 124 0.07 7.3
SMM4F10A
0.2 1 10 11.4 12.0 12.6 1 17.0 23.5 0.187 21.7 106 0.09 7.8
SMM4F12A
0.2 1 12 13.3 14.0 14.7 1 19.9 20.1 0.259 25.3 91 0.12 8.3
SMM4F13A
0.2 1 13 14.3 15.0 15.8 1 21.5 18.6 0.309 27.2 85 0.13 8.4
SMM4F15A
0.2 1 15 17.1 18.0 18.9 1 24.4 16.4 0.335 32.5 71 0.19 8.8
SMM4F18A
0.2 1 18 20.9 22.0 23.1 1 29.2 14.0 0.436 39.3 59 0.27 9.2
SMM4F20A
0.2 1 20 22.8 24.0 25.2 1 32.4 12.0 0.600 42.8 54 0.33 9.4
SMM4F24A
0.2 1 24 26.6 28.01 29.4 1 38.9 9.5 1.00 50 46 0.47 9.6
SMM4F26A
0.2 1 26 28.5 30.0 31.5 1 42.1 9.0 1.18 53.5 43 0.51 9.7
SMM4F28A
0.2 1 28 31.4 33.0 34.7 1 45.4 8.0 1.34 59.0 39 0.62 9.8
SMM4F33A
0.2 1 33 37.1 39.0 41.0 1 53.3 7.0 1.76 69.7 33 0.87 10.0
1. Pulse test: tp <50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax = RD x IPP + VBRmax
3. To calculate VBR versus junction temperature, use the following formula: VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25))
Figure 1.
Definition of IPP pulse
%IPP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr tp
t
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Characteristics
SMM4F
Figure 2. Peak power dissipation versus
initial junction temperature
PPP[Tj initial] / PPP[Tjinitial = 2 5 °C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
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0.3
0.2
0.1 Tj initial (°C)
0.0
0
25 50 75 100 125 150 175 200
Figure 3.
Peak pulse power versus
exponential pulse duration
(Tj initial = 25 °C)
PPP(kW)
10.0
Tj initial = 25 °C
1.0
0.1
1.0E-03
1.0E-02
tp(ms)
1.0E-01
1.0E+00
1.0E+01
Figure 4. Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
IPP(A)
1000
SMM4F5.0A
100
SMM4F15A
Tj initial=25 °C
SMM4F24A
SMM4F33A
10
1
tp = 8/20 µs
tp = 10/1000 µs
VCL(V)
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
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