SMF10A Datasheet PDF - Vishay


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SMF10A
Vishay

Part Number SMF10A
Description Surface Mount ESD Protection Diodes
Page 8 Pages

SMF10A datasheet pdf
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SMF5V0A to SMF58A
Vishay Semiconductors
Surface Mount ESD Protection Diodes
12
20278
MARKING
(example only)
17249
Bar = cathode marking
YY = type code (see table below)
XX = date code
22623
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
FEATURES
• 200 W peak pulse power capability with a
10/1000 μs waveform, repetition rate
(duty cycle): 0.01 %
Available
• Low-profile package
• Wave and reflow solderable
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
Available
• Low incremental surge resistance, excellent clamping
capability
• “Low-Noise” technology - very fast response time
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE
RoHS-COMPLIANT +
AEC-Q101 LEAD (Pb)-FREE TERMINATIONS TIN
QUALIFIED
PLATED
STANDARD HALOGEN-FREE
PACKAGING CODE
3K PER 7" REEL 10K PER 13" REEL
(8 mm TAPE),
(8 mm TAPE),
30K/BOX = MOQ 50K/BOX = MOQ
SMF5V0A-
E
3 -08
SMF5V0A-
M 3 -08
SMF5V0A-
H
E
3 -08
SMF5V0A-
H
M 3 -08
SMF5V0A-
E
3
-18
SMF5V0A-
M3
-18
SMF5V0A-
H
E
3
-18
SMF5V0A-
H
M3
-18
ORDERING CODE
(EXAMPLE)
SMF5V0A-E3-08
SMF5V0A-M3-08
SMF5V0A-HE3-08
SMF5V0A-HM3-08
SMF5V0A-E3-18
SMF5V0A-M3-18
SMF5V0A-HE3-18
SMF5V0A-HM3-18
PACKAGE DATA
PACKAGE
NAME
MOLDING
COMPOUND
WEIGHT
(mg)
HEIGHT
MAX.
(mm)
LENGTH
MAX.
(mm)
WIDTH
MAX.
(mm)
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE
SENSITIVITY
LEVEL
WHISKER TEST SOLDERING
ACC. JESD 201 CONDITIONS
SMF
Standard
(DO-219AB) Halogen-free
15
1.08 3.9
1.9
UL 94 V-0
MSL level 1
(acc. J-STD-020)
class 2
Peak
temperature
max. 260 °C
Rev. 1.5, 04-Dec-17
1 Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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SMF5V0A to SMF58A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
Peak pulse current
Peak pulse power
Peak forward surge current
ESD immunity
Thermal resistance
Forward clamping voltage
Junction temperature
Storage temperature range
Operating temperature range
tp = 10/1000 μs waveform
tp = 8/20 μs waveform acc. IEC 61000-4-5
tp = 10/1000 μs waveform
8.3 ms single half sine-wave
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads ( 40 μm thick)
IF = 50A, tp = 400 μs
IPPM
PPP
IFSM
VESD
RthJA
VF
TJ
Tstg
Top
VALUE
see “Electrical
Characteristics”
1000
200
50
± 30
± 30
180
2.5
175
-65 to +175
-65 to +175
UNIT
A
W
W
A
kV
kV
K/W
V
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
TYPE CODE
REVERSE
BREAKDOWN
VOLTAGE
at IT,
tp = 5 ms
MAXIMUM
TEST STAND-OFF REVERSE
CURRENT VOLTAGE CURRENT
at VRWM
MAXIMUM
PEAK PULSE
CURRENT
tp = 10/1000 μs
MAXIMUM
REVERSE
CLAMPING
VOLTAGE
at IPPM
STD.
HALOGEN-
FREE
VBR MIN.
(V)
IT
(mA)
VRWM
(V)
IR
(μA)
IPPM
VC MAX.
(A) (V)
SMF5V0A AE
NE
6.40 10 5
5
21.7 9.2
SMF6V0A AG
NG
6.67
10
6
26
19.4 10.3
SMF6V5A AK
NK
7.22
10 6.5 20
17.9 11.2
SMF7V0A AM
NM
7.78
10
7
3
16.7 12
SMF7V5A AP
NP
8.33
1 7.5 0.1
15.5 12.9
SMF8V0A AR
NR
8.89
1
8 0.1 14.7 13.6
SMF8V5A AT
NT
9.44
1 8.5 0.1
13.9 14.4
SMF9V0A AV
NV
10
1 9 0.1 13.5 15.4
SMF10A AX
NX
11.1
1 10 0.1 11.8
17
SMF11A AZ
NZ
12.2
1 11 0.1
11 18.2
SMF12A BE
OE
13.3
1 12 0.1 10.1 19.9
SMF13A BG
OG
14.4
1 13 0.1
9.3 21.5
SMF14A BK
OK
15.6
1 14 0.1
8.6 23.2
SMF15A BM
OM
16.7
1 15 0.1
8.2 24.4
SMF16A BP
OP
17.8
1 16 0.1
7.7
26
SMF17A BR
OR
18.9
1 17 0.1
7.2 27.6
SMF18A BT
OT
20
1 18 0.1
6.8 29.2
SMF20A BV
OV
22.2
1 20 0.1
6.2 32.4
SMF22A BX
OX
24.4
1 22 0.1
5.6 35.5
SMF24A BZ
OZ
26.7
1 24 0.1
5.1 38.9
SMF26A CE
PE
28.9
1 26 0.1
4.8 42.1
SMF28A CG
PG
31.1
1 28 0.1
4.4 45.4
SMF30A CK
PK
33.3
1 30 0.1
4.1 48.4
SMF33A CM
PM
36.7
1 33 0.1
3.8 53.3
SMF36A CP
PP
40
1 36 0.1
3.4 58.1
SMF40A CR
PR
44.4
1 40 0.1
3.1 64.5
SMF43A CT
PT
47.8
1 43 0.1
2.9 69.4
SMF45A CV
PV
50
1 45 0.1
2.8 72.7
SMF48A CX
PX
53.3
1 48 0.1
2.6 77.4
SMF51A CZ
PZ
56.7
1 51 0.1
2.4 82.4
SMF54A CA
PA
60
1 54 0.1 2.25 88
SMF58A CC
PC
64.4
1 58 0.1
2.1
95
TYPICAL
CAP.
at VR = 0 V,
f = 1 MHz
CD TYP.
(pF)
1120
1063
938
843
773
706
674
640
562
509
483
423
392
367
343
324
320
283
271
244
230
227
207
198
178
172
165
162
161
151
148
144
PROTECTION
PATHS
Nchannel
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. 1.5, 04-Dec-17
2 Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
SMF5V0A to SMF58A
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
100 %
Rise time = 0.7 ns to 1 ns
80 %
60 %
53 %
40 %
27 %
20 %
0%
-10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330
/150pF)
IRSM
(%)
100
90
50
t1 = 10 µs
t2 = 1000 µs
10
17415
t1
t2
Fig. 4 - Pulse Waveform
t
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10 20 30
Time (µs)
40
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
180
f = 1MHz
160
140
SMF43A
120 SMF45A
SMF48A
100 SMF51A
SMF54A
80 SMF58A
60
40
20
0
0.01 0.1 1 10
22719
VR in V
Fig. 5 - Typical Capacitance CD vs. Reverse Voltage VR
10
Non-repetitive pulse
TA = 25 °C
1
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
17250
td - Pulse Width (s)
Fig. 3 - Peak Pulse Power Rating
300
f = 1MHz
250
200
150 SMF22A
SMF24A
SMF26A
100
SMF28A
SMF30A
SMF33A
SMF36A
50 SMF40A
0
0.01
0.1
1
10
22720
VR in V
Fig. 6 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 1.5, 04-Dec-17
3 Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
600
f = 1MHz
500
400
300
SMF11A
SMF12A
200 SMF13A
SMF14A
SMF15A
100
SMSMF1F6A
SMF17A
SMF18A
0 SMF20A
0.01
0.1
1
10
22721
VR in V
Fig. 7 - Typical Capacitance CD vs. Reverse Voltage VR
1200
1000
f = 1MHz
800
600
SMF5V0A
SMF6V0A
400 SMF6V5A
SMF7V0A
SMF7V5A
200 SSMMFF8VV00A
SMF8V5A
SMF9V0A
0 SMF10A
0.01 0.1 1 10
22722
VR in V
Fig. 8 - Typical Capacitance CD vs. Reverse Voltage VR
10
SMF8V0A
9 SMF7V5A
SMF7V0A
8
SMF6V5A
7 SMF6V0A
SMF5V0A
6
5
4
0.01
TJ = Junction Tempe rature =  25 °C
1 100 10 000
22723
IR in μA
Fig. 9 - Typical Reverse Voltage VR vs. Reverse Current IR
SMF5V0A to SMF58A
Vishay Semiconductors
20
SMF16A
18 SMF15A
SMF14A
16 SMF13A
14 SMF12A
SMF11A
12 SMF10A
10
8
0.01
SMF9V0A
SMF8V5A
TJ = Junction T empe rature =  25 °C
1 100 10 000
22724
IR in μA
Fig. 10 - Typical Reverse Voltage VR vs. Reverse Current IR
40 SMF33A
35 SMF30A
SMF28A
SMF26A
30
SMF24A
SMF22A
25
SMF20A
SMF18A
20 SMF17A
15
0.01
TJ = Junction Tempe rature =  25 °C
1 100 10 000
22725
IR in μA
Fig. 11 - Typical Reverse Voltage VR vs. Reverse Current IR
70
TJ = Junc tion Tem  p erature = 25 °C SMF58A
65
SMF54A
60 SMF51A
SMF48A
55
SMF45A
50 SMF43A
SMF40A
45
SMF36A
40
0.01
1
100 10 000
22726
IR in μA
Fig. 12 - Typical Reverse Voltage VR vs. Reverse Current IR
Rev. 1.5, 04-Dec-17
4 Document Number: 85881
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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