SM7320ESQG Datasheet PDF - Sinopower

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SM7320ESQG
Sinopower

Part Number SM7320ESQG
Description Dual N-Channel Enhancement Mode MOSFET
Page 15 Pages


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SM7320ESQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
Channel 1
30V/64A,
R
DS(ON)
=
5.2m
(max.)
@
V
GS
=
10V
RDS(ON) = 7.5m(max.) @ VGS = 4.5V
Channel 2
30V/85A,
RDS(ON) = 1.8m(max.) @ VGS =10V
R
DS(ON)
=
2.5m
(max.)
@
V
GS
=4.5V
100% UIS Tested
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Pin Description
G2S2S2S2
D1
D1
G1D1
S1/D2
D1
DUAL DFN5x6-8
Pin1
D1
(2) (3) (4)
G1 (1)
S1/D2
G2
(8)
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
S2 (5)(6)(7)
N-Channel MOSFET
SM7320ES
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM7320ES QG :
SM7320
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
1
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SM7320ESQG
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VDSS Drain-Source Voltage
30 V
VGSS Gate-Source Voltage
±20 V
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
°C
IS Diode Continuous Forward Current
ID
b
P
Pulse Drain Current Tested
30 75 A
200 300 A
ID a Continuous Drain Current
TC=25°C
TC=100°C
64
40
85
A
80
PD Maximum Power Dissipation
TC=25°C
TC=100°C
35
14
83
W
33
RθJC Thermal Resistance-Junction to Case
Steady State
3.5
1.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
16 30
A
13 24
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.08 2.38
W
1.33 1.52
t 10s
RθJA Thermal Resistance-Junction to Ambient
Steady State
30
60
28
°C/W
52.5
IAS c Avalanche Current, Single pulse (L=0.1mH)
30 50 A
EAS c Avalanche Energy, Single pulse (L=0.1mH)
45 125 mJ
Note aPackage is limited to 85A.
Note bPulse width is limited by max. junction temperature.
Note cUIS tested and pulse width are limited by maximum junction temperature 150oC(initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
2
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SM7320ESQG
®
Channel 1 Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Channel 1
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=20A
TJ=125°C
VGS=4.5V, IDS=15A
VDS=5V, IDS=15A
30
-
-
1.5
-
-
-
-
-
ISD=10A, VGS=0V
IDS=5A, dlSD/dt=100A/µs
-
-
-
-
-
--
-1
- 30
1.8 2.5
- ±100
4.3 5.2
6-
5.7 7.5
30 -
0.75 1.1
17.1 -
9.4 -
7.7 -
9.3 -
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
0.4
1160
181
80
-
-
-
-
0.6
1450
258
133
10
11
25
8
1.5
1740
335
186
19
21
46
15
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
ID S= 20A
- 12.5 -
- 26.2 37
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
ID S= 20A
- 1.9 -
- 3.2 -
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
- 5.6 -
Unit
V
µA
V
nA
m
S
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
3
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SM7320ESQG
®
Channel 2 Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Channel 2
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
TJ=125°C
VGS=4.5V, IDS=15A
VDS=5V, IDS=15A
30
-
-
1.4
-
-
-
-
-
ISD=20A, VGS=0V
IDS=30A, dlSD/dt=100A/µs
-
-
-
-
-
- -V
-1
µA
- 30
1.7 2.5 V
- ±100 nA
1.5 1.8
2 - m
1.9 2.5
37 - S
0.75 1.1
31.4 -
14.7 -
16.7 -
22.9 -
V
ns
nC
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
0.5
3160
602
237
-
-
-
-
0.7
3950
860
395
18
12
47
27
1.5
4938
1118
572
33
23
86
50
pF
ns
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
ID S= 30A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
ID S= 30A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
- 29.9 -
- 65.2 91
- 4.8 - nC
- 8.6 -
- 13 -
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - August, 2014
4
www.sinopowersemi.com



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