SM6020NSF Datasheet PDF - Sinopower

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SM6020NSF
Sinopower

Part Number SM6020NSF
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages


SM6020NSF datasheet pdf
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SM6020NSF
Features
· 63V/80A,
RDS(ON)= 4.5mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
Applications
G
· High Efficiency Synchronous Rectification in
SMPS.
· Uninterruptible Power Supply.
.
S
N-Channel MOSFET
Ordering and Marking Information
SM6020NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM6020NS F : SM6020N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
1
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SM6020NSF
®
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EASb Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Note aCurrent limited by bond wire.
Note bStarting TJ=25°C, L=1mH, IAS=30A, VDD=50V, VGS=10V
Rating
63
±25
150
-55 to 150
40
300
80a
80a
166
66
0.75
62.5
450
Unit
V
°C
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VSDc Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
63
-
-
2
-
-
- -V
- 1 mA
- 30
3 4V
- ±100 nA
3.7 4.5 mW
ISD=20A, VGS=0V
IDS=40A, dlSD/dt=100A/ms
-
-
-
0.8 1.3 V
42 - ns
62 - nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
2
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SM6020NSF
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics d
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=40A
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
1
4450
675
310
23
35
58
36
84
23
23
Max.
-
5800
-
-
42
63
105
65
110
-
-
Unit
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
3
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SM6020NSF
Typical Operating Characteristics
®
Power Dissipation
200
160
120
80
40
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
100
80
60
40
20
T =25oC,V =10V
CG
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature
Safe Operation Area
800
1ms
100 10ms
100ms
1s
10
DC
TC=25oC
1
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
5
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4 1E-3 0.01
Mounted on minimum pad
RqJA : 62.5oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2014
4
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SM6020NSF datasheet pdf
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SM6020NSF pdf
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