SM4377NSKP Datasheet PDF - Sinopower


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SM4377NSKP
Sinopower

Part Number SM4377NSKP
Description N-Channel Enhancement Mode MOSFET
Page 13 Pages

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SM4377NSKP
Features
30V/50A,
RDS(ON)= 7m(max.) @ VGS=10V
RDS(ON)= 9.6m(max.) @ VGS=4.5V
Provide Excellent Qgd x Rds-on
100% UIS + R Tested
g
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Pin 1
Applications
(4) G
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM4377NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4377NS KP :
SM4377
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - August, 2015
1
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SM4377NSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
IDP Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
PD b Maximum Power Dissipation
RθJA b Thermal Resistance-Junction to Ambient
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady State
30
±20
150
-55 to 150
30
120
85
50*
35
32
12.8
3.9
12.8
10.2
1.73
1.11
28
72
V
°C
°C
A
A
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
L=0.3mH
L=0.5mH
25
19 A
14
L=0.1mH
31
EAS c Avalanche Energy, Single pulse
L=0.3mH
54 mJ
L=0.5mH
50
Note a* Current limited by bond wire.
Note bSurface Mounted on 1in2 pad area, t =999sec.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - August, 2015
2
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SM4377NSKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
BVDSSt
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250µA
VGS=0V, ID(aval)=10A
Tcase=25°C, ttransient=100ns
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
TJ=125°C
VGS=4.5V, IDS=15A
VDS=5V, IDS=30A
30
34
-
-
1.5
-
-
-
-
-
ISD=15A, VGS=0V
IDS=15A, dlSD/dt=100A/µs
-
-
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
0.7
980
158
90
-
-
-
-
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=30A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
IDS=30A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
-
-
Typ.
-
-
-
-
1.8
-
5.6
8.4
7.4
70
0.85
20
11
9
10
1
1180
190
115
11
12
36
10
10
20
2.2
3.5
4.2
Max.
-
-
1
30
2.5
±100
7
-
9.6
-
1.1
-
-
-
-
1.5
1400
228
140
20
22
60
19
12
24
2.7
4.1
4.7
Unit
V
V
µA
V
nA
m
S
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - August, 2015
3
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SM4377NSKP
Typical Operating Characteristics
®
Power Dissipation
35
30
25
20
15
10
5
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
60
50
40
30
20
10
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
400
100
1ms
10ms
10
100ms
1
1s
DC
T =25OC
0.1 C
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
1E-3
1E-4 1E-3 0.01 0.1
Mounted on 1in2 pad
R :72oC/W
θJA
1 10 100 1000
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.9 - August, 2015
4
www.sinopowersemi.com




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