SM3407PSQA Datasheet PDF - Sinopower

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SM3407PSQA
Sinopower

Part Number SM3407PSQA
Description P-Channel Enhancement Mode MOSFET
Page 12 Pages


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SM3407PSQA
®
P-Channel Enhancement Mode MOSFET
Features
-20V/-11A,
R
DS(ON)
=
17m(max.)
@
V
GS
=-4.5V
RDS(ON) = 25m(max.) @ VGS =-2.5V
RDS(ON) = 45m(max.) @ VGS =-1.8V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
HBM ESD protection level pass 2KV
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Applications
Portable Equipment and Battery Powered
Systems.
Pin Description
DDDD
S S SG
DFN3.3x3.3-8
( 5,6,7,8 )
D D DD
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM3407PS
SM3407PS QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3407P
XXXXX
Package Code
QA : DFN3.3x3.3-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
1
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SM3407PSQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID a
IDM a
ID c
IS a
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=-4.5V)
Pulsed Drain Current (VGS=-4.5V)
Continuous Drain Current
Diode Continuous Forward Current
TA=25°C
TA=70°C
TC=25°C
TC=100°C
-20
±12
-11
-8.8
-44 *
-35
-22
-10
V
A
TJ
IAS d
EAS d
TSTG
Maximum Junction Temperature
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Storage Temperature Range
L=0.5mH
L=0.5mH
150
-12
36
-55 to 150
°C
A
mJ
°C
PD a Maximum Power Dissipation
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
TC=25°C
TC=100°C
3.1
2
31.25
12.5
W
RθJA a,b Thermal Resistance-Junction to Ambient
t 10s
Steady State
40 °C/W
80
RθJC c Thermal Resistance-Junction to Case
4 °C/W
Note *Package limited.
Note aSurface Mounted on 1in2 pad area, t 10sec.
Note bMaximum under Steady State conditions is 75 °C/W.
Note cThe power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RθJC) when additional heat sink is used.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
2
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SM3407PSQA
®
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON) e
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-11A
VGS=-2.5V, IDS=-6A
-20
-
-
-0.5
-
-
-
Diode Characteristics
VSD e Diode Forward Voltage
trr f Reverse Recovery Time
Qrr f Reverse Recovery Charge
Dynamic Characteristics f
VGS=-1.8V, IDS=-1A
-
ISD=-1A, VGS=0V
ISD=-11A, dlSD/dt=100A/µs
-
-
-
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10,
IDS=-1A, VGEN=-4.5V,
RG=6
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-11A
-
-
-
Note ePulse test; pulse width300µs, duty cycle2%.
Note fGuaranteed by design, not subject to production testing.
Typ.
-
-
-
-
-
13
18
26
-0.7
63
54
1620
320
290
9
13
26
167
25
1.6
11
Max.
-
-1
-30
-1
±10
17
25
45
-1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
V
µA
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
3
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SM3407PSQA
Typical Operating Characteristics
®
Power Dissipation
35
30
25
20
15
10
5
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
40
35
30
25
20
15
10
5
T =25oC,V =-4.5V
CG
0
0 20 40 60 80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
100
10 1ms
T =25oC
1C
0.1
1
10ms
DC
10 50
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
1E-3
R :4oC/W
θJC
0.01 0.1
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2014
4
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