SM3405NSQG Datasheet PDF - Sinopower

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SM3405NSQG
Sinopower

Part Number SM3405NSQG
Description N-Channel Enhancement Mode MOSFET
Page 11 Pages


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SM3405NSQG
Features
· 30V/50A,
RDS(ON) = 3.2mW(max.) @ VGS =4.5V
RDS(ON) = 4mW(max.) @ VGS =2.5V
· Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD protection
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
SS SG
DFN3.3x3.3-8
(5,6,7,8)
DD DD
Applications
(4) G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3405NS
SM3405NS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3405N
XXXXX
Package Code
QG : DFN3.3x3.3-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
1
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SM3405NSQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TST G
IS
ID
ID M
PD
RqJC
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
PD Maximum Power Dissipation
RqJA Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady State
30
±12
150
-55 to 150
50a
50a
50
200b
62.5
25
2
20
16
1.78
1.14
35
70
V
°C
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
50 A
EAS c Avalanche Energy, Single pulse
L=0.1mH
125 mJ
Note aPackage is limited by 50A.
Note bPulse width is limited by maximum junction temperature.
Note cUIS tested and pulse width is limited by maximum junction temperature 150oC (initial temperature TJ = 25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
2
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SM3405NSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Par am et er
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RD
S(
d
ON)
Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
VGS=4.5V, IDS=20A
TJ=125°C
VGS=2.5V, IDS=20A
VDS=5V, IDS=20A
30
-
-
0.5
-
-
-
-
-
VSD d Diode Forward Voltage
ISD=20A, VG S=0V
-
trr Reverse Recovery Time
-
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
IF=20A, dlSD/dt=100A/ms
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,VDS=0V, F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
-
-
-
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
-
-
-
-
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=20A
-
-
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
IDS=20A
Qgd Gate-Drain Charge
Note dPulse test; pulse width £ 300 ms, duty cycle £ 2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
0.8
-
2.5
3.9
3.0
74
0.7
14.8
7.1
7.7
3.9
0.85
4920
510
350
16.6
12.2
135
48
47
96
2.75
5.5
16
Max.
-
1
30
1.1
±10
3.2
-
4.0
-
1.1
-
-
-
-
-
-
-
-
31
23
244
87
66
134
3.8
7.7
22
Unit
V
mA
V
mA
mW
S
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
3
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SM3405NSQG
Typical Operating Characteristics
®
Power Dissipation
70
60
50
40
30
20
10
0 TC=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
500
100
1ms
10
DC 10ms
T =25oC
1C
0.01 0.1 1 10 100 300
VDS - Drain - Source Voltage (V)
Drain Current
60
50
40
30
20
10
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
3
1 Duty = 0.5
0.1
0.01
0.1
0.05
0.2
0.02
0.01
1E-3
1E-4
Single Pulse
1E-5
1E-6
1E-5
1E-4
1E-3
RqJC :2oC/W
0.01 0.1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
4
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