SM3331PSQG Datasheet PDF - Sinopower

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SM3331PSQG
Sinopower

Part Number SM3331PSQG
Description P-Channel Enhancement Mode MOSFET
Page 11 Pages


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SM3331PSQG
®
P-Channel Enhancement Mode MOSFET
Features
· -30V/-40A,
RDS(ON) = 6.1mW(max.) @ VGS =-10V
RDS(ON) = 11mW(max.) @ VGS =-4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· HBM ESD protection level pass 8KV
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
Pin Description
DDDD
SS SG
DFN3.3x3.3-8
( 5,6,7,8 )
D D DD
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
SM3331PS
SM3331PS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3331
XXXXX
Package Code
QG : DFN3.3x3.3-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2013
1
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SM3331PSQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain Current
TC=25°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RqJC Thermal Resistance-Junction to Case
Steady State
ID Continuous Drain Current
TA=25°C
TA=70°C
PD Maximum Power Dissipation
TA=25°C
TA=70°C
RqJA Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
IAS a Avalanche Current, Single pulse
L=0.5mH
EAS a Avalanche Energy, Single pulse
L=0.5mH
Note aUIS tested and pulse width are limited by maximum junction temperature 150oC
(initial temperature TJ = 25oC).
Note bPackage limited.
Rating
-30
±25
150
-55 to 150
-40 b
-40 b
-40 b
-40 b
62.5
25
2
-21.3
-17.1
4.2
2.7
30
75
27
182
Unit
V
°C
A
W
°C/W
A
W
°C/W
A
mJ
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2013
2
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SM3331PSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr d Reverse Recovery Time
Qrr d Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=-250mA
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250mA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-20A
VGS=-4.5V, IDS=-10A
ISD=-1A, VGS=0V
ISD=-20A, dlSD/dt=100A/ms
-30
-
-
-1.3
-
-
-
-
-
-
Rg Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V, VDS=0V,F=1MHz
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-15V, RL=15W,
IDS=-1A, VGEN=-10V,
RG=6W
-
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=-15V, VGS=-4.5V,
IDS=-20A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-20A
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
-1.8
-
4.9
8
-0.7
19
6
3
2862
593
470
20
19
93
56
30
60
2.8
20
Max.
-
-1
-30
-2.3
±10
6.1
11
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
V
mA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2013
3
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SM3331PSQG
Typical Operating Characteristics
®
Power Dissipation
70
60
50
40
30
20
10
0 TC=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
500
100
1ms
10
10ms
DC
1 TC=25oC
0.01
0.1
1
10 100 300
-VDS - Drain - Source Voltage (V)
Drain Current
50
40
30
20
10
0 TC=25oC,VG=-10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
3
1
0.1
0.01
Duty = 0.5
0.1
0.05
0.2
0.02
0.01
1E-3
1E-4
Single Pulse
1E-5
1E-6
1E-5
1E-4
1E-3
R :2oC/W
qJC
0.01 0.1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2013
4
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