SM3106NSF Datasheet PDF - Sinopower

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SM3106NSF
Sinopower

Part Number SM3106NSF
Description N-Channel Enhancement Mode MOSFET
Page 12 Pages


SM3106NSF datasheet pdf
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SM3106NSF
Features
30V/112A,
RDS(ON)= 6m(max.) @ VGS=10V
RDS(ON)= 8.3m(max.) @ VGS=4.5V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS Tested
Applications
Optimized for UPS/Inverter Application.
Power Tool Battery Pack Application.
®
N-Channel Enhancement Mode MOSFET
Pin Description
S
D
G
Top View of TO-220
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM3106NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM3106NS F : SM3106NS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
1
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SM3106NSF
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
60
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
112
A
71
224
PD Maximum Power Dissipation
TC=25°C
TC=100°C
113
W
45
RθJC Thermal Resistance-Junction to Case
ID b Continuous Drain Current
PD b Maximum Power Dissipation
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
1.1 °C/W
16.3
A
13
2.4
W
1.5
RθJA b Thermal Resistance-Junction to Ambient
t 10s
Steady State
15 °C/W
52
IAS c Avalanche Current, Single pulse
L=0.1mH
46 A
EAS c Avalanche Energy, Single pulse
L=0.1mH
106 mJ
Note aPulse width limited by max. junction temperature.
Note bRθJA steady state t=100s. RθJA is measured with the device mounted on 1in2, FR-4 board with 2oz. Copper.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
2
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SM3106NSF
®
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=25A
TJ=125°C
VGS=4.5V, IDS=20A
VDS=10 , ID=10A
30
-
-
1.3
-
-
-
-
-
ISD=30A, VGS=0V
IF=5A, dlSD/dt=100A/µs
-
-
-
-
-
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=20A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V,
IDS=20A
Qgd Gate-Drain Charge
Note dPulse test ; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.7
-
5
7.6
6.4
34
0.85
20
8
12
10
1
2390
420
230
10.4
6.6
44.8
13.6
41.8
18.5
3
6.7
6.9
Max.
-
1
30
2.5
±100
6
-
8.3
-
1.1
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
V
nA
m
S
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
3
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SM3106NSF
Typical Operating Characteristics
®
Power Dissipation
120
100
80
60
40
20
T =25oC
0C
0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Drain Current
120
100
80
60
40
20
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Safe Operation Area
500
100 Rds(on) Limit
100µs
1ms
10
10ms
1 DC
T =25oC
0.1 C
0.1
1
10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1
0.1
0.01
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
R : 1.1oC/W
θJC
1E-3 0.01 0.1
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
4
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