SM3095PSD Datasheet PDF - Sinopower

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SM3095PSD
Sinopower

Part Number SM3095PSD
Description P-Channel Enhancement Mode MOSFET
Page 11 Pages


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SM3095PSD
Features
· -30V/-4.4A,
RDS(ON) = 55mW(max.) @ VGS = -10V
RDS(ON) = 80mW(max.) @ VGS = -4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD Protection
®
P-Channel Enhancement Mode MOSFET
Pin Description
S
D
G
Top View of SOT-89
(2)
D
Applications
(1)
G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S
(3)
P-Channel MOSFET
Ordering and Marking Information
SM3095PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
D : SOT-89
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (1000pcs/reel)
Assembly Material
G : Halogen and Lead Free Device
SM3095PS D:
SM3095
XXXXX_P
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
1
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SM3095PSD
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM *
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note *Surface Mounted on 1in2 pad area.
VGS=-10V
TA=25°C
TA=100°C
Rating
-30
±20
-4.4
-17
-2
150
-55 to 150
1.6
0.6
80
Unit
V
A
A
°C
W
°C/W
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
2
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SM3095PSD
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=0V, IDS=-250mA
VDS=-24V, VGS=0V
Tj=85°C
VDS=VGS, IDS=-250mA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-4.4A
VGS=-4.5V, IDS=-2A
ISD=-2A, VGS=0V
-30
-
-
-1
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Dynamic Characteristics b
VDS=-15V, VGS=-10V,
IDS=-4.4A
-
-
-
Ciss
Coss
Crss
td(ON)
Tr
td (OFF )
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-15V, RL=15W,
IDS=-1A, VGEN=-10V,
RG=6W
-
-
-
-
-
-
-
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IDS=-4.4A,
dlSD/dt=100A/ms
Note aPulse test ; pulse width£300ms, duty cycle£2%.
Note bGuaranteed by design, not subject to production testing.
-
-
Typ.
-
-
-
-1.5
-
46
62
-0.8
13
1.3
3
642
76
66
8
13
26
7
13
7
Max.
-
-1
-30
-2.3
±10
55
80
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
V
mA
mW
V
nC
pF
ns
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
3
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SM3095PSD
Typical Operating Characteristics
®
Power Dissipation
1.8
1.5
1.2
0.9
0.6
0.3
0.0 TA=25oC
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
50
10
1 300ms
1ms
10ms
100ms
0.1 1s
DC
T =25OC
0.01 A
0.01 0.1 1 10 100
-VDS - Drain - Source Voltage (V)
Drain Current
5
4
3
2
1
0 TA=25oC,VG=-10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
RqJA :80oC/W
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
4
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