SM2A12NSF Datasheet PDF - Sinopower

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SM2A12NSF
Sinopower

Part Number SM2A12NSF
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages


SM2A12NSF datasheet pdf
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SM2A12NSF
Features
· 200V/25A,
RDS(ON)= 70mW(max.) @ VGS= 10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
Applications
· High Frequency DC-DC converters.
· Plasma Display Panel.
· Power Management in TV Converter.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2A12NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM2A12NS F : SM2A12N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
1
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SM2A12NSF
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
200
V
±25
TJ
TST G
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC =25° C
12 A
ID Continuous Drain Current
TC =25° C
TC =100°C
25
16 A
IDM a Pulsed Drain Current
TC =25° C
75
PD Maximum Power Dissipation
TC =25° C
TC =100°C
113
W
45
RqJC Thermal Resistance-Junction to Case
1.1 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
3.4
A
2.7
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.28
RqJA Thermal Resistance-Junction to Ambient
IAS b Avalanche Current, Single pulse
L=0.5mH
62.5 °C/W
6.5 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
10 mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
2
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SM2A12NSF
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=250mA
VDS=160V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=12A
ISD=6A, VGS=0V
ISD=12A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=100V, VGS=10V,
IDS=12A
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
Min.
200
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3
-
58
0.8
75
250
1.0
2350
155
45
16
7
37
15
40
14
10
Max.
-
1
30
4
±100
70
1.3
-
-
-
3100
-
-
29
13
67
28
56
-
-
Unit
V
mA
V
nA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
3
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SM2A12NSF
®
Typical Operating Characteristics
Power Dissipation
125
100
75
50
25
TC=25oC
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
30
25
20
15
10
5
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature
Safe Operation Area
200
100
100ms
10
1
1ms
DC
0.1 TC=25oC
10ms
0.01 0.1
1
10 100 1000
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.01
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6 1E-5 1E-4
R :1.1oC/W
qJC
1E-3 0.01 0.1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2014
4
www.sinopowersemi.com



SM2A12NSF datasheet pdf
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