SM2326NSAN Datasheet PDF - Sinopower

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SM2326NSAN
Sinopower

Part Number SM2326NSAN
Description N-Channel Enhancement Mode MOSFET
Page 12 Pages


SM2326NSAN datasheet pdf
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SM2326NSAN
Features
20V/3A,
RDS(ON)= 70m(max.) @ VGS= 4.5V
R=
DS(ON)
90m(max.)
@
V=
GS
2.5V
RDS(ON)= 110m(max.) @ VGS= 1.8V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23N
D
Applications
Power Management in DC/AC Inverter Systems
DC-DCConverter
Load Switch
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2326NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
AN : SOT-23N
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2326NS AN :
A26XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - October, 2014
1
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SM2326NSAN
®
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID *
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t 10 Sec.
VGS=4.5V
TA=25°C
TA=100°C
Rating
20
±8
3
12
1
150
-55 to 150
0.83
0.3
150
Unit
V
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IDS=250µA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±8V, VDS=0V
VGS=4.5V, IDS=2.5A
VGS=2.5V, IDS=2.3A
VGS=1.8V, IDS=2A
ISD=1A, VGS=0V
ISD=1A, dlSD/dt=100A/µs
Min. Typ. Max. Unit
20 - - V
- -1
µA
- - 30
0.5 0.7 1
V
- - ±100 nA
- 45 70
- 60 90 m
- 75 110
- 0.75 1.2 V
- 10 - ns
- 3.2 - nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - October, 2014
2
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SM2326NSAN
®
Electrical Characteristics (Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,
VDS=10V,
Fr equenc y=1.0MHz
VDD=10V, RL=10,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=2.5A
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
- 300 -
- 53 - pF
- 47 -
- 3.2 -
- 11.5 -
- 25.5 -
ns
-4-
-5-
- 0.5 - nC
- 1.7 -
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - October, 2014
3
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SM2326NSAN
Typical Operating Characteristics
®
Power Dissipation
1.0
0.8
0.6
0.4
0.2
T =25oC
A
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T =25oC,V =10V
AG
0.0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature
Safe Operation Area
50
10
1 300µs
1ms
10ms
0.1 100ms
DC
T =25oC
A
0.01
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
R : 150 oC/W
θJA
0.1 1 10 30
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - October, 2014
4
www.sinopowersemi.com



SM2326NSAN datasheet pdf
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SM2326NSAN N-Channel Enhancement Mode MOSFET SM2326NSAN
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SM2326NSAN pdf

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