SM1C01NSF Datasheet PDF - Sinopower

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SM1C01NSF
Sinopower

Part Number SM1C01NSF
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages


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SM1C01NSF
Features
· 120V/120A,
RDS(ON)= 8.4mW(max.) @ VGS= 10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
Applications
· Synchronous Rectification
· Power Management in Inverter Systems
· Motor Driver
Ordering and Marking Information
G
S
N-Channel MOSFET
SM1C01NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1C01NS F : SM1C01N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
1
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SM1C01NSF
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
120
±25 V
TJ
TST G
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
80
ID Continuous Drain Current
TC=25°C
120 A
IDM Pulsed Drain Current
TC=25°C
400a
PD Maximum Power Dissipation
TC=25°C
TC=100°C
250
W
100
RqJC Thermal Resistance-Junction to Case
Steady State
0.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
11
A
9
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.25
RqJA Thermal Resistance-Junction to Ambient
IAS b Avalanche Current, Single pulse (L=0.5mH)
Steady State
62.5 °C/W
45 A
EAS b Avalanche Energy, Single pulse (L=0.5mH)
500 mJ
Note aPulse width limited by max. junction temperature.
bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
2
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SM1C01NSF
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=250mA
VDS=96V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
ISD=20A, VGS=0V
ISD=40A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
V GS=0V ,V DS =0V,f=1MHz
VGS=0V,
V DS =30V ,
Frequency=1.0MHz
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=40A
Note cPulse test; pulse width£300ms, duty cycle£2%.
dGuaranteed by design, not subject to production testing.
Min.
120
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3
-
7
0.8
56
140
1.0
6150
625
120
26
10
92
55
100
29
19
Max.
-
1
30
4
±100
8.4
1.3
-
-
-
8000
-
-
47
18
166
99
140
-
-
Unit
V
mA
V
nA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
3
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SM1C01NSF
®
Typical Operating Characteristics
Power Dissipation
300
250
200
150
100
50
T =25oC
0C
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
140
120
100
80
60
40
20
0 TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
1000
100
100ms
1ms
10 10ms
100ms
DC
T =25oC
1C
0.01 0.1 1 10 100 600
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.01
0.02
0.01
1E-3 Single Pulse
1E-4
RqJC :0.5oC/W
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Square Wave Pulse Duration (sec)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
4
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